Datasheets
2N5401 by:
Rectron Semiconductor
Allegro MicroSystems LLC
Boca Semiconductor Inc
Bytesonic Corporation
Central Semiconductor Corp
Charter Engineering Inc
Continental Device India Ltd
Crimson Semiconductor Inc
Digitron Semiconductors
Diodes Incorporated
Diotec Semiconductor AG
Fairchild Semiconductor Corporation
Freescale Semiconductor
HSMC Corporation
Jiangsu Changjiang Electronics Technology Co Ltd
KEC
Kodenshi Corporation
Kodenshi Sensing
KSL Microdevices Inc
Kuwait Semiconductor Co Ltd
Lite-On Semiconductor Corporation
Loras Industries Inc
LRC Leshan Radio Co Ltd
Luguang Electronic Technology Co Ltd
Lumimax Optoelectronic Technology
Micro Commercial Components
Micro Electronics Corporation
Micro Electronics Ltd
Microsemi Corporation
Motorola Mobility LLC
Motorola Semiconductor Products
MSi
MultiComponents Bene
National Semiconductor Corporation
New Jersey Semiconductor Products Inc
North American Philips Discrete Products Div
NTE Electronics Inc
NXP Semiconductors
onsemi
Philips Semiconductors
Promax-Johnton Electronic Corporation
Rectron Semiconductor
Rochester Electronics LLC
ROHM Semiconductor
Samsung Semiconductor
Secos Corporation
Shanghai Lunsure Electronic Technology Co Ltd
SLKOR
SPC Multicomp
STMicroelectronics
Surge Components Inc
Suzhou Good-Ark Electronics Co Ltd
SY Sinyork Co Ltd
SynSemi Inc
Taitron Components Inc
Texas Instruments
Toshiba America Electronic Components
Transys Electronics Limited
TT Electronics Power and Hybrid / Semelab Limited
TT Electronics Resistors
Unisonic Technologies Co Ltd
Vishay Intertechnologies
Vishay Sprague
WEITRON INTERNATIONAL CO., LTD.
Yangzhou Yangjie Electronics Co Ltd
Zetex / Diodes Inc
Not Found

Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

Part Details for 2N5401 by Rectron Semiconductor

Results Overview of 2N5401 by Rectron Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Audio and Video Systems

2N5401 Information

2N5401 by Rectron Semiconductor is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N5401

Part # Distributor Description Stock Price Buy
DISTI # 583-2N5401
Mouser Electronics Bipolar Transistors - BJT TO-92 PNP 0.6A 150V HighVol RoHS: Compliant 0
  • 20,000 $0.0400
$0.0400 Order Now
Onlinecomponents.com Transistor, Power Rating - 0.625W, Polarity - PNP, DC Collector/Base Gain hfe Min - 60, DC Current G... ain hFE Max - 300 more RoHS: Compliant 0
  • 500 $0.0577
  • 5,000 $0.0455
  • 10,000 $0.0435
  • 30,000 $0.0329
  • 50,000 $0.0315
  • 100,000 $0.0310
  • 150,000 $0.0303
  • 250,000 $0.0298
$0.0298 / $0.0577 Buy Now

Part Details for 2N5401

2N5401 Part Data Attributes

2N5401 Rectron Semiconductor
Buy Now Datasheet
Compare Parts:
2N5401 Rectron Semiconductor Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
Select a part to compare:
Part Life Cycle Code Active
Ihs Manufacturer RECTRON LTD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Samacsys Manufacturer Rectron
Collector Current-Max (IC) 0.6 A
Collector-Emitter Voltage-Max 150 V
Configuration SINGLE
DC Current Gain-Min (hFE) 60
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 0.625 W
Power Dissipation-Max (Abs) 0.625 W
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz
VCEsat-Max 0.5 V

Alternate Parts for 2N5401

This table gives cross-reference parts and alternative options found for 2N5401. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5401, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N5401 Toshiba America Electronic Components Check for Price 2N5401 2N5401 vs 2N5401

2N5401 Related Parts

2N5401 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 2N5401 is -55°C to 150°C.

  • While the 2N5401 can be used as a switch, it's not ideal for high-frequency circuits due to its relatively high transition frequency (fT) of 30 MHz. For high-frequency applications, consider using a transistor with a higher fT.

  • To ensure proper biasing for linear amplifier applications, use a voltage divider network to set the base voltage, and ensure the collector-emitter voltage is at least 2-3 times the voltage drop across the load. Also, consider using a current-limiting resistor in the collector circuit.

  • The maximum collector current rating for the 2N5401 is 1 A. Exceeding this rating can lead to device failure.

  • Yes, the 2N5401 can be used in a Darlington pair configuration to increase the current gain. However, ensure proper biasing and heat sinking to prevent overheating.