Datasheets
2N5115E3 by:
Microchip Technology Inc
Microchip Technology Inc
Microsemi Corporation
Not Found

Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA

Part Details for 2N5115E3 by Microchip Technology Inc

Results Overview of 2N5115E3 by Microchip Technology Inc

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Applications Consumer Electronics Audio and Video Systems Entertainment and Gaming

2N5115E3 Information

2N5115E3 by Microchip Technology Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N5115E3

Part # Distributor Description Stock Price Buy
DISTI # 33AJ0804
Newark Jfet To-18 Rohs Compliant: Yes |Microchip 2N5115E3 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $35.5500
  • 500 $34.1800
$34.1800 / $35.5500 Buy Now
DISTI # 150-2N5115E3-ND
DigiKey JFET P-CH 30V TO18 Min Qty: 100 Lead time: 24 Weeks Container: Bulk Temporarily Out of Stock
  • 100 $35.5502
$35.5502 Buy Now
DISTI # 2N5115E3
Avnet Americas Trans JFET P-CH 30V 3-Pin TO-206AA Bag - Bulk (Alt: 2N5115E3) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Bulk 0
  • 100 $37.3191
  • 110 $33.6244
  • 210 $33.0793
  • 500 $32.5321
  • 1,000 $32.0064
$32.0064 / $37.3191 Buy Now
DISTI # 494-2N5115E3
Mouser Electronics JFETs JFET RoHS: Compliant 61
  • 1 $38.2700
  • 100 $35.5500
$35.5500 / $38.2700 Buy Now
DISTI # 2N5115E3
Microchip Technology Inc JFET _ TO-18, Projected EOL: 2049-02-05 Lead time: 24 Weeks, 0 Days 0

Alternates Available
  • 1 $38.2700
$38.2700 Buy Now
Future Electronics TO-18 (TO-206AA) SCREENING AVAILABLE AS MIL-PRF-19500 TRANSJFET P-CH 30PIN RoHS: Compliant pbFree: Yes Min Qty: 41 Package Multiple: 1 Lead time: 24 Weeks Container: Bulk 0
Bulk
  • 1 $36.5900
  • 4 $36.0500
  • 10 $35.7000
  • 25 $35.3600
  • 40 $34.8400
$34.8400 / $36.5900 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 25 $92.9600
  • 50 $49.2100
  • 75 $34.6300
  • 100 $33.9400
$33.9400 / $92.9600 Buy Now
NAC JFETs RoHS: Compliant Min Qty: 9 Package Multiple: 1 0
  • 1 $39.0600
  • 100 $35.9700
  • 500 $34.1700
  • 800 $33.3400
$33.3400 / $39.0600 Buy Now
Master Electronics   RoHS: Compliant 0
  • 25 $92.9600
  • 50 $49.2100
  • 75 $34.6300
  • 100 $33.9400
$33.9400 / $92.9600 Buy Now

Part Details for 2N5115E3

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2N5115E3 Part Data Attributes

2N5115E3 Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
2N5115E3 Microchip Technology Inc Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description ROHS COMPLIANT, TO-18, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 24 Weeks
Additional Feature HIGH RELIABILITY
Configuration SINGLE
DS Breakdown Voltage-Min 30 V
Drain-source On Resistance-Max 100 Ω
FET Technology JUNCTION
Feedback Cap-Max (Crss) 7 pF
JEDEC-95 Code TO-206AA
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type P-CHANNEL
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for 2N5115E3

This table gives cross-reference parts and alternative options found for 2N5115E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5115E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N5115 Crimson Semiconductor Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN 2N5115E3 vs 2N5115
2N5115 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, 2N5115E3 vs 2N5115
2N5115 Space Power Electronics Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN 2N5115E3 vs 2N5115
MQ2N5115 Microchip Technology Inc $63.3539 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA 2N5115E3 vs MQ2N5115
2N5115E3 Microsemi Corporation Check for Price Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA, ROHS COMPLIANT, TO-18, 3 PIN 2N5115E3 vs 2N5115E3
JAN2N5115 Harris Semiconductor Check for Price Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, SIMILAR TO TO-18, 3 PIN 2N5115E3 vs JAN2N5115
2N5115 Linear Integrated Systems Check for Price Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, METAL PACKAGE-3 2N5115E3 vs 2N5115
2N5115 Harris Semiconductor Check for Price Small Signal Field-Effect Transistor, P-Channel, Junction FET 2N5115E3 vs 2N5115
Part Number Manufacturer Composite Price Description Compare
JANTXV2N5115 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, P-Channel, Junction FET, 2N5115E3 vs JANTXV2N5115
JANTX2N5115 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, 2N5115E3 vs JANTX2N5115
JANTXV2N5115 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, 2N5115E3 vs JANTXV2N5115
2N5115-PBF Digitron Semiconductors Check for Price Small Signal Field-Effect Transistor 2N5115E3 vs 2N5115-PBF
MX2N5115UB Microsemi Corporation Check for Price Small Signal Field-Effect Transistor, P-Channel, Junction FET 2N5115E3 vs MX2N5115UB
JANTX2N5115UB Microsemi Corporation Check for Price Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 2N5115E3 vs JANTX2N5115UB
2N5115UB Microsemi Corporation Check for Price Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, SURFACE MOUNT PACKAGE-3 2N5115E3 vs 2N5115UB
2N5115UBE3 Microsemi Corporation Check for Price Small Signal Field-Effect Transistor, P-Channel, Junction FET 2N5115E3 vs 2N5115UBE3
JAN2N5115 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, 2N5115E3 vs JAN2N5115
2N5115HR Digitron Semiconductors Check for Price Small Signal Field-Effect Transistor 2N5115E3 vs 2N5115HR

2N5115E3 Related Parts

2N5115E3 Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the 2N5115E3 is -40°C to +125°C, as specified in the datasheet. However, it's essential to note that the device's performance may vary outside this range, and it's crucial to consider the application's specific requirements.

  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels specified in the datasheet. Additionally, consider the input and output impedance, as well as the load conditions, to ensure the device operates within its specified parameters.

  • The maximum power dissipation for the 2N5115E3 is 1.5 W, as specified in the datasheet. However, it's essential to consider the device's thermal characteristics, such as the thermal resistance and junction temperature, to ensure the device operates within its safe operating area.

  • Yes, the 2N5115E3 can be used in switching applications, but it's essential to consider the device's switching characteristics, such as the transition frequency, rise and fall times, and output impedance, to ensure the device meets the application's requirements.

  • To protect the 2N5115E3 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider implementing ESD protection circuits, such as diodes or resistors, in the application's design.