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Trigger Devices / Silicon Controlled Rectifiers / 2N5062G
Datasheets
2N5062G by: onsemi

Silicon Controlled Rectifier - SCR, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX

Part Details for 2N5062G by onsemi

Results Overview of 2N5062G by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

2N5062G Information

2N5062G by onsemi is a Silicon Controlled Rectifier.
Silicon Controlled Rectifiers are under the broader part category of Trigger Devices.

Trigger devices initiate or control actions in electronic circuits by producing output signals when specific input conditions are met. They are commonly used in timing circuits and pulse generators. Read more about Trigger Devices on our Trigger Devices part category page.

Price & Stock for 2N5062G

Part # Distributor Description Stock Price Buy
DISTI # 26K5289
Newark Scr Thyristor, 510Ma, 100V, To-92, Peak Repetitive Off State Voltage:100V, Gate Trigger Current Ma... x:200Μa, Average On State Current:510Ma, On State Rms Current:800Ma, Thyristor Case Style:To-92, No. Of Pins:3Pins, Product Range:- Rohs Compliant: Yes |Onsemi 2N5062G more RoHS: Compliant Min Qty: 10000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 2N5062G
Avnet Silica Thyristor SCR 100V 10A 3Pin TO92 Bulk (Alt: 2N5062G) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 143 Weeks, 0 Days Silica - 0
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Vyrian Triggering Devices 463
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Part Details for 2N5062G

2N5062G CAD Models

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2N5062G Part Data Attributes

Parametric Data
2N5062G onsemi
Buy Now Datasheet
Compare Parts:
2N5062G onsemi Silicon Controlled Rectifier - SCR, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX
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Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-92 (TO-226) 5.33mm Body Height
Package Description LEAD FREE, PLASTIC, CASE 29-11, TO-226AA, 3 PIN
Pin Count 3
Manufacturer Package Code 29-11
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.30.00.80
Samacsys Manufacturer onsemi
Circuit Commutated Turn-off Time-Nom 30 µs
Configuration SINGLE
DC Gate Trigger Current-Max 0.2 mA
DC Gate Trigger Voltage-Max 1.2 V
Holding Current-Max 10 mA
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e1
Leakage Current-Max 0.05 mA
Non-Repetitive Pk On-state Cur 10 A
Number of Elements 1
Number of Terminals 3
On-state Current-Max 510 A
Operating Temperature-Max 110 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
RMS On-state Current-Max 0.8 A
Repetitive Peak Off-state Voltage 100 V
Repetitive Peak Reverse Voltage 100 V
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Trigger Device Type SCR

Alternate Parts for 2N5062G

This table gives cross-reference parts and alternative options found for 2N5062G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5062G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MCR100-3-18 Motorola Semiconductor Products Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-226AA 2N5062G vs MCR100-3-18
MCR100-3 Texas Instruments Check for Price SCR, TO-92 2N5062G vs MCR100-3
C103A Central Semiconductor Corp Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-92, PLASTIC PACKAGE-3 2N5062G vs C103A
2N5062-5 Motorola Mobility LLC Check for Price 0.8A, 100V, SCR, TO-226AA 2N5062G vs 2N5062-5
2N5062RLRA onsemi Check for Price 0.8A, 100V, SCR, TO-92, PLASTIC, CASE 29-11, TO-226AA, 3 PIN 2N5062G vs 2N5062RLRA
C205A Motorola Semiconductor Products Check for Price Silicon Controlled Rectifier, 1.2A I(T)RMS, 1200mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-226AA 2N5062G vs C205A
2N5062 Semitronics Corp Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 510mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-92 2N5062G vs 2N5062
Part Number Manufacturer Composite Price Description Compare
2N5062APPLEADFREE Central Semiconductor Corp Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(RRM), 1 Element, TO-92, 2N5062G vs 2N5062APPLEADFREE
MCR100-3-OPTION18 Texas Instruments Check for Price SCR, TO-92 2N5062G vs MCR100-3-OPTION18
EC103A Littelfuse Inc Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-92, TO-92, 3 PIN 2N5062G vs EC103A
2N5062TRA Central Semiconductor Corp Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(RRM), 1 Element, TO-92 2N5062G vs 2N5062TRA
2N5062TRH Central Semiconductor Corp Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(RRM), 1 Element, TO-92 2N5062G vs 2N5062TRH
2N5062TRC Central Semiconductor Corp Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(RRM), 1 Element, TO-92 2N5062G vs 2N5062TRC
2N5062APP Central Semiconductor Corp Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(RRM), 1 Element, TO-92 2N5062G vs 2N5062APP
2N5062TRE Central Semiconductor Corp Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(RRM), 1 Element, TO-92 2N5062G vs 2N5062TRE
2N5062 Loras Industries Inc Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 510mA I(T), 100V V(DRM), 1 Element, TO-92 2N5062G vs 2N5062
2N5062 Teccor Check for Price Silicon Controlled Rectifier, 0.8A I(T)RMS, 510mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-92, TO-92, 3 PIN 2N5062G vs 2N5062

2N5062G Related Parts

2N5062G Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the 2N5062G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to consult with an onsemi application engineer for specific guidance.

  • To ensure the 2N5062G is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to a value that ensures the device operates within its linear region. Additionally, it's crucial to consider the device's current gain (β) and Early voltage (VA) when designing the bias circuit.

  • For optimal performance and reliability, it's recommended to follow good PCB layout practices, such as minimizing trace lengths, using wide traces for power lines, and placing decoupling capacitors close to the device. Thermal management is also critical, and it's recommended to use a heat sink or thermal pad to dissipate heat generated by the device. Consult with an onsemi application engineer for specific guidance on PCB layout and thermal management.

  • Yes, the 2N5062G can be used in switching applications, but it's essential to consider the device's switching characteristics, such as its transition frequency (ft), storage time (ts), and fall time (tf). Additionally, the device's power handling capabilities, thermal management, and PCB layout become critical in switching applications. Consult with an onsemi application engineer for specific guidance on using the 2N5062G in switching applications.

  • To ensure ESD protection for the 2N5062G, it's recommended to follow standard ESD handling procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Additionally, consider incorporating ESD protection devices, such as TVS diodes or ESD protection arrays, into the circuit design to protect the device from electrostatic discharge events.