Datasheets
2N4921G by: onsemi

Medium Power NPN Bipolar Power Transistor, TO-225, 500-BLKBX

Part Details for 2N4921G by onsemi

Results Overview of 2N4921G by onsemi

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2N4921G Information

2N4921G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N4921G

Part # Distributor Description Stock Price Buy
Bristol Electronics   268
RFQ
Rochester Electronics 2N4921 - Power Bipolar Transistor, 3A, 40V, NPN, TO-225, Plastic/Epoxy, 3 Pin RoHS: Compliant Status: Obsolete Min Qty: 1 35
  • 1 $0.2808
  • 25 $0.2752
  • 100 $0.2640
  • 500 $0.2527
  • 1,000 $0.2387
$0.2387 / $0.2808 Buy Now
ComSIT USA MEDIUM-POWER PLASTIC NPN SILICON TRANSISTOR Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Eleme... nt, NPN, Silicon, TO-225, Plastic/Epoxy, 3 Pin more RoHS: Compliant ECCN: EAR99 Stock DE - 725
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # 2N4921G
Avnet Silica Trans GP BJT NPN 40V 1A 3Pin3Tab TO225 Bulk (Alt: 2N4921G) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # 2N4921G
EBV Elektronik Trans GP BJT NPN 40V 1A 3Pin3Tab TO225 Bulk (Alt: 2N4921G) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 163
RFQ

Part Details for 2N4921G

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2N4921G Part Data Attributes

2N4921G onsemi
Buy Now Datasheet
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2N4921G onsemi Medium Power NPN Bipolar Power Transistor, TO-225, 500-BLKBX
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-225
Package Description ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
Pin Count 3
Manufacturer Package Code 77-09
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
JEDEC-95 Code TO-225
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 30 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3 MHz

Alternate Parts for 2N4921G

This table gives cross-reference parts and alternative options found for 2N4921G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N4921G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
TIP31 Micro Electronics Ltd Check for Price Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 2N4921G vs TIP31
Part Number Manufacturer Composite Price Description Compare
TIP31J69Z Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 2N4921G vs TIP31J69Z
TIP31 Galaxy Microelectronics Check for Price Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 40V; IC (A): 3A; HFE Min: 10; HFE Max: 50; VCE (V): 4V; IC (mA): 3000mA; VCE(SAT) (V): 1.2V; IC (mA)1: 3000mA; IB (mA): 375mA; FT Min (MHz): 3 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB 2N4921G vs TIP31
TIP31 Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 2N4921G vs TIP31
TIP31 Micro Electronics Corporation Check for Price Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 2N4921G vs TIP31

2N4921G Related Parts

2N4921G Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the 2N4921G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.

  • To ensure the 2N4921G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is within the recommended range (typically around 0.6-0.7V) and that the collector-emitter voltage (Vce) is sufficient to maintain a linear operating region. You may need to adjust the bias resistors and voltage sources to achieve the desired operating point.

  • For optimal thermal performance, it's recommended to use a PCB layout that provides good thermal conduction and minimal thermal resistance. This can be achieved by using a thermal pad or heat sink, and ensuring that the device is mounted on a thick copper plane or thermal vias. Additionally, consider using thermal interface materials (TIMs) to improve heat transfer between the device and heat sink.

  • To handle ESD protection for the 2N4921G, it's recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins. You should also follow proper PCB design and layout practices to minimize the risk of ESD damage, such as using guard rings and ESD-protected components.

  • To prevent damage and ensure the reliability of the 2N4921G, it's recommended to store the devices in their original packaging or in a dry, cool place away from direct sunlight. Avoid exposing the devices to moisture, extreme temperatures, or physical stress. When handling the devices, use anti-static wrist straps, mats, or other ESD protection measures to prevent damage from electrostatic discharge.