Datasheets
2N4401 by:

Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Details for 2N4401 by National Semiconductor Corporation

Overview of 2N4401 by National Semiconductor Corporation

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for 2N4401

Part # Distributor Description Stock Price Buy
Onlinecomponents.com   5 In Stock
  • 1 $1.7100
  • 50 $1.2500
  • 100 $0.7180
  • 500 $0.2520
  • 1,000 $0.1030
  • 2,500 $0.0808
$0.0808 / $1.7100 Buy Now
Bristol Electronics   6400
RFQ
Quest Components Bipolar Junction Transistor, NPN Type, TO-92 46
  • 1 $0.3500
  • 15 $0.1750
$0.1750 / $0.3500 Buy Now
Quest Components Bipolar Junction Transistor, NPN Type, TO-92 5122
  • 1 $0.9360
  • 1,426 $0.1872
  • 4,275 $0.1638
$0.1638 / $0.9360 Buy Now
Quest Components Bipolar Junction Transistor, NPN Type, TO-92 15
  • 1 $0.2000
$0.2000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 223
  • 1 $0.3800
  • 100 $0.2900
  • 1,000 $0.2500
$0.2500 / $0.3800 Buy Now
ES Components NSC 2N4401 BARE DIE 1391 in Stock
RFQ

Part Details for 2N4401

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2N4401 Part Data Attributes:

2N4401 National Semiconductor Corporation
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2N4401 National Semiconductor Corporation Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Package Description TO-92, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH SPEED SATURATED SWITCHING
Collector Current-Max (IC) 1 A
Collector-Base Capacitance-Max 6.5 pF
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
Turn-off Time-Max (toff) 255 ns
Turn-on Time-Max (ton) 35 ns
VCEsat-Max 0.75 V

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