2N4367
Description: Silicon Controlled Rectifier, 70000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-94,

Overview of 2N4367 by Semitronics Corp

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Part Data Attributes for 2N4367 by Semitronics Corp

2N4367
Semitronics Corp
-
-
Part Life Cycle Code
Contact Manufacturer
Ihs Manufacturer
SEMITRONICS CORP
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.30.00.80
Configuration
SINGLE
Critical Rate of Rise of Off-State Voltage-Min
100 V/us
DC Gate Trigger Current-Max
250 mA
DC Gate Trigger Voltage-Max
5 V
Holding Current-Max
200 mA
JEDEC-95 Code
TO-94
JESD-30 Code
O-MUPM-H3
Leakage Current-Max
10 mA
Non-Repetitive Pk On-state Cur
1600 A
Number of Elements
1
Number of Terminals
3
On-state Current-Max
70000 A
Operating Temperature-Max
125 °C
Operating Temperature-Min
-45 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
POST/STUD MOUNT
Qualification Status
Not Qualified
Repetitive Peak Off-state Voltage
1200 V
Repetitive Peak Reverse Voltage
1200 V
Surface Mount
NO
Terminal Form
HIGH CURRENT CABLE
Terminal Position
UPPER
Trigger Device Type
SCR
Want to compare parts?
  1. 2N4367
    Semitronics Corp
    Silicon Controlled Rectifier, 70000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-94,
    VS

Alternate Parts for 2N4367

This table gives cross-reference parts and alternative options found for 2N4367. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N4367, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N4367E3 Silicon Controlled Rectifier, 110A I(T)RMS, 1200V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN Microsemi Corporation 2N4367 vs 2N4367E3
Part Number Description Manufacturer Compare
70C80B Silicon Controlled Rectifier, 110A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN Microsemi Corporation 2N4367 vs 70C80B
2N4367 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN Microsemi Corporation 2N4367 vs 2N4367
2N4366 Silicon Controlled Rectifier, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-94, Semitronics Corp 2N4367 vs 2N4366
2N4366 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element Powerex Power Semiconductors 2N4367 vs 2N4366
2N4365 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element Powerex Power Semiconductors 2N4367 vs 2N4365
2N4366 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN Microsemi Corporation 2N4367 vs 2N4366
2N4367E3 Silicon Controlled Rectifier, 110A I(T)RMS, 1200V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN Microsemi Corporation 2N4367 vs 2N4367E3
2N4365 Silicon Controlled Rectifier, 70000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-94, Semitronics Corp 2N4367 vs 2N4365
2N4365 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN Microsemi Corporation 2N4367 vs 2N4365

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