Part Details for 2N4003 by New England Semiconductor
Overview of 2N4003 by New England Semiconductor
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Applications
Consumer Electronics
Audio and Video Systems
Part Details for 2N4003
2N4003 CAD Models
2N4003 Part Data Attributes
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2N4003
New England Semiconductor
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Datasheet
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2N4003
New England Semiconductor
Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 30 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| JEDEC-95 Code | TO-63 | |
| JESD-30 Code | O-MUPM-D3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | POST/STUD MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 100 W | |
| Power Dissipation-Max (Abs) | 100 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | SOLDER LUG | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 30 MHz | |
| Turn-off Time-Max (toff) | 3000 ns | |
| Turn-on Time-Max (ton) | 1000 ns | |
| VCEsat-Max | 1.2 V |