Part Details for 2N3996 by New England Semiconductor
Overview of 2N3996 by New England Semiconductor
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Part Details for 2N3996
2N3996 CAD Models
2N3996 Part Data Attributes
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2N3996
New England Semiconductor
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Datasheet
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2N3996
New England Semiconductor
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 5 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JEDEC-95 Code | TO-111 | |
| JESD-30 Code | O-MUPM-D3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | POST/STUD MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 30 W | |
| Power Dissipation-Max (Abs) | 2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | SOLDER LUG | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 40 MHz | |
| Turn-off Time-Max (toff) | 1500 ns | |
| Turn-on Time-Max (ton) | 300 ns | |
| VCEsat-Max | 2 V |