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Transistors / Small Signal Field-Effect Transistors / 2N3956
Datasheets
2N3956 by:
InterFET Corporation
Advanced Semiconductor Inc
Allegro MicroSystems LLC
Analog Devices Inc
Calogic Inc
Central Semiconductor Corp
Crimson Semiconductor Inc
Digitron Semiconductors
Harris Semiconductor
InterFET Corporation
Intersil Corporation
Linear Integrated Systems
Micross Components
National Semiconductor Corporation
New Jersey Semiconductor Products Inc
Semiconductors Inc
Solitron Devices Inc
Space Power Electronics Inc
Texas Instruments
Thomson Consumer Electronics
Vishay Intertechnologies
Vishay Siliconix
Vishay Sprague
Not Found

Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71

Part Details for 2N3956 by InterFET Corporation

Results Overview of 2N3956 by InterFET Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

2N3956 Information

2N3956 by InterFET Corporation is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N3956

2N3956 CAD Models

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2N3956 Part Data Attributes

Parametric Data
2N3956 InterFET Corporation
Buy Now Datasheet
Compare Parts:
2N3956 InterFET Corporation Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71
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Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer INTER F E T CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Configuration SEPARATE, 2 ELEMENTS
FET Technology JUNCTION
Feedback Cap-Max (Crss) 1.2 pF
JEDEC-95 Code TO-71
JESD-30 Code O-MBCY-W6
Number of Elements 2
Number of Terminals 6
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.5 W
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for 2N3956

This table gives cross-reference parts and alternative options found for 2N3956. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3956, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N3956 Central Semiconductor Corp Check for Price Small Signal Field-Effect Transistor, N-Channel, Silicon, Junction FET, TO-71, TO-71, 8 PIN 2N3956 vs 2N3956
2N3956 Crimson Semiconductor Inc Check for Price Small Signal Field-Effect Transistor, N-Channel, Silicon, Junction FET, TO-71, TO-71, 8 PIN 2N3956 vs 2N3956
2N3956 Texas Instruments Check for Price 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 2N3956 vs 2N3956
Part Number Manufacturer Composite Price Description Compare
FDS6990AS onsemi Check for Price Dual N-Channel PowerTrench® SyncFET™, 30V, 7.5A, 22mΩ, SOIC-8, 2500-REEL 2N3956 vs FDS6990AS
U401 National Semiconductor Corporation Check for Price TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71, FET General Purpose Small Signal 2N3956 vs U401
U401 Calogic Inc Check for Price Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, HERMETIC SEALED PACKAGE-6 2N3956 vs U401
ZXMP3A17E6TC Diodes Incorporated Check for Price Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN 2N3956 vs ZXMP3A17E6TC
PMN34UN NXP Semiconductors Check for Price 4900mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTC, SC-74, 6 PIN 2N3956 vs PMN34UN
2N5197 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, 2N3956 vs 2N5197
2N5908 Micross Components Check for Price TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, HERMETIC SEALED, TO-78, 6 PIN, FET General Purpose Small Signal 2N3956 vs 2N5908
FDS6990AS Fairchild Semiconductor Corporation Check for Price 30V Dual N-Channel PowerTrench® SyncFET™, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL 2N3956 vs FDS6990AS
FDS6990AD84Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 2N3956 vs FDS6990AD84Z
ZXMN2A04DN8TC Diodes Incorporated Check for Price Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 2N3956 vs ZXMN2A04DN8TC

2N3956 Related Parts

2N3956 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the 2N3956 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.

  • To ensure the 2N3956 is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet or application notes. This typically involves setting the base-emitter voltage (Vbe) and collector-emitter voltage (Vce) to the recommended values, and ensuring that the device is operated within the specified current and voltage ranges.

  • The recommended PCB layout and thermal management for the 2N3956 involve following good design practices for high-power transistors. This includes using a thermally conductive PCB material, providing adequate heat sinking and thermal relief, and minimizing thermal resistance between the device and the heat sink. Additionally, it's recommended to follow the manufacturer's guidelines for PCB layout and thermal management.

  • To protect the 2N3956 from electrostatic discharge (ESD), you should follow standard ESD protection practices, such as handling the device in an ESD-safe environment, using ESD-protective packaging and materials, and implementing ESD protection circuits or devices in the design.

  • The reliability and lifespan of the 2N3956 depend on various factors, including operating conditions, environmental factors, and manufacturing quality. The datasheet may provide some information on the device's reliability and lifespan, but it's recommended to consult with the manufacturer or a reliability expert for more detailed information.