Part Details for 2N3767 by New England Semiconductor
Overview of 2N3767 by New England Semiconductor
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- Part Data Attributes
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Applications
Industrial Automation
Aerospace and Defense
Energy and Power Systems
Renewable Energy
Price & Stock for 2N3767
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | Bipolar Junction Transistor, NPN Type, TO-66 | 6 |
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$6.0000 / $12.0000 | Buy Now |
Part Details for 2N3767
2N3767 CAD Models
2N3767 Part Data Attributes
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2N3767
New England Semiconductor
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Datasheet
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2N3767
New England Semiconductor
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JEDEC-95 Code | TO-213AA | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 20 W | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 10 MHz | |
VCEsat-Max | 12.5 V |