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Transistors / Power Bipolar Transistors / 2N3739
Datasheets
2N3739 by:
Motorola Semiconductor Products
Amphenol RF
Boca Semiconductor Inc
Central Semiconductor Corp
Crimson Semiconductor Inc
Defense Logistics Agency
Digitron Semiconductors
Fairchild Semiconductor Corporation
Freescale Semiconductor
General Diode Corp
General Transistor Corp
GTCAP
Hi-Tron Semiconductor Corp
High Voltage Semiconductor Inc
Microchip Technology Inc
Microsemi Corporation
Motorola Mobility LLC
Motorola Semiconductor Products
New England Semiconductor
New Jersey Semiconductor Products Inc
Semiconductor Technology Inc
Semitronics Corp
Silicon Transistor Corporation
Solid State Devices Inc (SSDI)
Solitron Devices Inc
Space Power Electronics Inc
Spectrum Control
Swampscott Electronics Co Inc
Telcom Semiconductor Inc
Transistor & Electronic Co
TT Electronics Power and Hybrid / Semelab Limited
TT Electronics Resistors
Vishay Semiconductors
Not Found

Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin

Part Details for 2N3739 by Motorola Semiconductor Products

Results Overview of 2N3739 by Motorola Semiconductor Products

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

2N3739 Information

2N3739 by Motorola Semiconductor Products is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N3739

Part # Distributor Description Stock Price Buy
Bristol Electronics   3
RFQ
Quest Components TRANSISTOR,BJT,NPN,300V V(BR)CEO,250MA I(C),TO-66 140
  • 1 $15.0000
  • 28 $6.5000
  • 78 $6.0000
$6.0000 / $15.0000 Buy Now
Quest Components TRANSISTOR,BJT,NPN,300V V(BR)CEO,250MA I(C),TO-66 19
  • 1 $14.2500
  • 2 $9.5000
  • 4 $7.1250
$7.1250 / $14.2500 Buy Now
Quest Components TRANSISTOR,BJT,NPN,300V V(BR)CEO,250MA I(C),TO-66 4
  • 1 $12.4341
  • 2 $10.3618
  • 3 $9.1183
$9.1183 / $12.4341 Buy Now
Quest Components TRANSISTOR,BJT,NPN,300V V(BR)CEO,250MA I(C),TO-66 3
  • 1 $8.8500
  • 2 $7.3750
  • 4 $6.4900
$6.4900 / $8.8500 Buy Now
Quest Components TRANSISTOR,BJT,NPN,300V V(BR)CEO,250MA I(C),TO-66 2
  • 1 $13.6200
  • 2 $9.0800
$9.0800 / $13.6200 Buy Now

Part Details for 2N3739

2N3739 CAD Models

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2N3739 Part Data Attributes

Parametric Data
2N3739 Motorola Semiconductor Products
Buy Now Datasheet
Compare Parts:
2N3739 Motorola Semiconductor Products Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin
Select a part to compare:
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 300 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-213AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 10 MHz

Alternate Parts for 2N3739

This table gives cross-reference parts and alternative options found for 2N3739. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3739, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
JANTXV2N3739 Microchip Technology Inc Check for Price Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin 2N3739 vs JANTXV2N3739
JANTX2N3739 Microchip Technology Inc Check for Price Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin 2N3739 vs JANTX2N3739
JANTXV2N3739 Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, SIMILAR TO TO-66, 2 PIN 2N3739 vs JANTXV2N3739
2N3739 General Diode Corp Check for Price Power Bipolar Transistor, 0.25A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3739 vs 2N3739
2N3739E1 TT Electronics Power and Hybrid / Semelab Limited Check for Price 0.25A, 300V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN 2N3739 vs 2N3739E1
2N3739 Solid State Devices Inc (SSDI) Check for Price Power Bipolar Transistor, 0.25A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3739 vs 2N3739
2N3739 Spectrum Control Check for Price Power Bipolar Transistor, 3A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, 2N3739 vs 2N3739
2N3739 Motorola Mobility LLC Check for Price 1A, 300V, NPN, Si, POWER TRANSISTOR, TO-213AA 2N3739 vs 2N3739
2N3739 Vishay Semiconductors Check for Price Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3739 vs 2N3739
Part Number Manufacturer Composite Price Description Compare
JAN2N3739 Microchip Technology Inc Check for Price Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin 2N3739 vs JAN2N3739
JANTX2N3739 Defense Logistics Agency Check for Price Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, SIMILAR TO TO-66, 2 PIN 2N3739 vs JANTX2N3739
2N3738 Crimson Semiconductor Inc Check for Price Power Bipolar Transistor, 0.25A I(C), 225V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3739 vs 2N3738
JAN2N3739 Silicon Transistor Corporation Check for Price Power Bipolar Transistor, 0.25A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-213, Metal, 2 Pin 2N3739 vs JAN2N3739
2N3738 Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 1A I(C), 225V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin 2N3739 vs 2N3738
2N3738 Space Power Electronics Inc Check for Price Power Bipolar Transistor, 0.25A I(C), 225V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3739 vs 2N3738
2N4297 Semiconductor Technology Inc Check for Price Power Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3739 vs 2N4297
JANTXV2N3739 Silicon Transistor Corporation Check for Price Power Bipolar Transistor, 0.25A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-213, Metal, 2 Pin 2N3739 vs JANTXV2N3739
2N4297 Microsemi Corporation Check for Price Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, 2N3739 vs 2N4297
2N3738 Vishay Semiconductors Check for Price Power Bipolar Transistor, 3A I(C), 225V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN 2N3739 vs 2N3738

2N3739 Related Parts

2N3739 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the 2N3739 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the transistor within the boundaries of the maximum ratings specified in the datasheet to ensure reliable operation.

  • To ensure the 2N3739 is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet or application notes. Typically, this involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. You may also need to adjust the bias resistors and capacitors to achieve the desired operating point.

  • The recommended heatsink for the 2N3739 depends on the specific application and operating conditions. As a general rule, a heatsink with a thermal resistance of around 10-20°C/W is recommended. You can use a standard TO-220 heatsink or a custom-designed heatsink depending on your specific requirements.

  • Yes, the 2N3739 can be used as a switch, but it's not the most suitable device for this application. The 2N3739 is a linear transistor, and it's optimized for analog signal amplification rather than digital switching. If you need a switching transistor, you may want to consider a different device, such as the 2N3904 or 2N2222.

  • The maximum frequency of operation for the 2N3739 is not explicitly stated in the datasheet, but it's generally limited by the device's transition frequency (fT) and the parasitic capacitances. As a rough estimate, the 2N3739 can operate up to around 100-200 MHz, but this may vary depending on the specific application and circuit design.