Part Details for 2N3700RUBT by STMicroelectronics
Overview of 2N3700RUBT by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for 2N3700RUBT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2N3700RUBT
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Avnet Americas | Trans GP BJT NPN 80V 1A 4-Pin UB Waffle - Bulk (Alt: 2N3700RUBT) RoHS: Compliant Min Qty: 25 Package Multiple: 10 Container: Bulk | 0 |
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RFQ | |
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Ameya Holding Limited | 20228 |
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RFQ |
Part Details for 2N3700RUBT
2N3700RUBT CAD Models
2N3700RUBT Part Data Attributes:
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2N3700RUBT
STMicroelectronics
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Datasheet
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2N3700RUBT
STMicroelectronics
Rad-Hard 80 V, 1 A NPN transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Base Capacitance-Max | 12 pF | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 50 | |
| JESD-30 Code | R-XDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.5 W | |
| Power Dissipation-Max (Abs) | 0.76 W | |
| Reference Standard | ESA/SCC 5201/004; RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 0.5 V |