There are no models available for this part yet.
Overview of 2N3416 by Central Semiconductor Corp
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Audio and Video Systems
Price & Stock for 2N3416 by Central Semiconductor Corp
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
2N3416
|
Avnet Americas | Bipolar Transistor NPN Amplifier/Switch 50V 500mA 3-Pin TO-92 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N3416) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Container: Box | 0 |
|
RFQ |
CAD Models for 2N3416 by Central Semiconductor Corp
Part Data Attributes for 2N3416 by Central Semiconductor Corp
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
CENTRAL SEMICONDUCTOR CORP
|
Part Package Code
|
TO-92
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.21.00.95
|
Samacsys Manufacturer
|
Central Semiconductor
|
Collector Current-Max (IC)
|
0.5 A
|
Collector-Emitter Voltage-Max
|
50 V
|
Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
75
|
JEDEC-95 Code
|
TO-92
|
JESD-30 Code
|
O-PBCY-T3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-65 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
ROUND
|
Package Style
|
CYLINDRICAL
|
Polarity/Channel Type
|
NPN
|
Power Dissipation Ambient-Max
|
0.625 W
|
Power Dissipation-Max (Abs)
|
1.5 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
BOTTOM
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
VCEsat-Max
|
0.3 V
|
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