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1000mA, 65V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, METAL PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N2102 by STMicroelectronics is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 22 |
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RFQ | ||
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Quest Components | TRANSISTOR,BJT,NPN,65V V(BR)CEO,1A I(C),TO-5 | 37 |
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$0.4335 / $0.5100 | Buy Now |
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2N2102
STMicroelectronics
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Datasheet
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Compare Parts:
2N2102
STMicroelectronics
1000mA, 65V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, METAL PACKAGE-3
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-39 | |
Package Description | METAL PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 65 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
JEDEC-95 Code | TO-39 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 60 MHz | |
Turn-off Time-Max (toff) | 30 ns |
This table gives cross-reference parts and alternative options found for 2N2102. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N2102, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N2102 | Raytheon Semiconductor | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | 2N2102 vs 2N2102 |
2N2102 | Micro Electronics Corporation | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN | 2N2102 vs 2N2102 |
2N2102 | Solid State Devices Inc (SSDI) | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN | 2N2102 vs 2N2102 |
The maximum safe operating temperature for the 2N2102 is 150°C, as specified in the datasheet. However, it's recommended to operate the transistor within a temperature range of -55°C to 125°C for optimal performance and reliability.
To ensure the 2N2102 is properly biased for linear operation, you should provide a stable voltage supply, set the base-emitter voltage (Vbe) to around 0.7V, and adjust the collector-emitter voltage (Vce) to the desired level. Additionally, ensure the transistor is operated within its recommended current and power ratings.
The maximum current handling capacity of the 2N2102 is 1.5A, as specified in the datasheet. However, it's recommended to operate the transistor at a current level that is 20-30% below the maximum rating to ensure reliable operation and prevent overheating.
Yes, the 2N2102 can be used as a switch. However, you should ensure that the transistor is fully saturated (Vce(sat) < 0.5V) and the base current is sufficient to drive the load. Additionally, consider the switching frequency, as high-frequency switching can lead to increased power losses and reduced transistor lifespan.
To protect the 2N2102 from electrostatic discharge (ESD), handle the transistor by the body, avoid touching the leads, and use an anti-static wrist strap or mat. Additionally, ensure the printed circuit board (PCB) is designed with ESD protection in mind, and consider adding ESD protection devices, such as diodes or resistors, to the circuit.