Datasheets
2N1489 by:
New England Semiconductor
Baneasa SA
Boca Semiconductor Inc
Central Semiconductor Corp
Crimson Semiconductor Inc
Defense Logistics Agency
Digitron Semiconductors
Electronic Transistors Corp
General Transistor Corp
GTCAP
Harris Semiconductor
Hi-Tron Semiconductor Corp
International Devices Inc
Intersil Corporation
Microchip Technology Inc
Microsemi Corporation
New England Semiconductor
RCA
Semitronics Corp
Silicon Transistor Corporation
Solid State Devices Inc (SSDI)
Solitron Devices Inc
Space Power Electronics Inc
Spectrum Control
Swampscott Electronics Co Inc
Transistor & Electronic Co
Not Found

Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin,

Part Details for 2N1489 by New England Semiconductor

Results Overview of 2N1489 by New England Semiconductor

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2N1489 Information

2N1489 by New England Semiconductor is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for 2N1489

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2N1489 Part Data Attributes

2N1489 New England Semiconductor
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2N1489 New England Semiconductor Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin,
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 25
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 1 MHz
VCEsat-Max 1 V

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