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Insulated Gate Bipolar Transistor
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Part # | Distributor | Description | Stock | Price | Buy | |
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MacroQuest Electronics | 54 |
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RFQ |
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2MBI200VA-060-50
Fuji Electric Co Ltd
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Datasheet
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2MBI200VA-060-50
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | FUJI ELECTRIC | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 200 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7.2 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 600 ns | |
Turn-on Time-Nom (ton) | 650 ns | |
VCEsat-Max | 2.25 V |