Part Details for 2MBI200L-060 by Fuji Electric Co Ltd
Overview of 2MBI200L-060 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2MBI200L-060
2MBI200L-060 CAD Models
2MBI200L-060 Part Data Attributes
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2MBI200L-060
Fuji Electric Co Ltd
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Datasheet
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2MBI200L-060
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, M219, 7 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH SPEED | |
Collector Current-Max (IC) | 200 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 350 ns | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1600 W | |
Power Dissipation-Max (Abs) | 800 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 3.5 V |
Alternate Parts for 2MBI200L-060
This table gives cross-reference parts and alternative options found for 2MBI200L-060. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2MBI200L-060, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSM150GB120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, | Siemens | 2MBI200L-060 vs BSM150GB120DN2 |
GP200MHS12 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Dynex Semiconductor | 2MBI200L-060 vs GP200MHS12 |
CM200DU-12F | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | 2MBI200L-060 vs CM200DU-12F |
2MBI200L-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M225, 7 PIN | Fuji Electric Co Ltd | 2MBI200L-060 vs 2MBI200L-120 |
2MBI200N-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | 2MBI200L-060 vs 2MBI200N-120 |
CM200HA-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Powerex Power Semiconductors | 2MBI200L-060 vs CM200HA-24H |
MG200N1US1 | TRANSISTOR 200 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 2MBI200L-060 vs MG200N1US1 |
CM200DU-24F | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | 2MBI200L-060 vs CM200DU-24F |
1MBI200N-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN | Fuji Electric Co Ltd | 2MBI200L-060 vs 1MBI200N-120 |
1MBI200L-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M116, 4 PIN | Fuji Electric Co Ltd | 2MBI200L-060 vs 1MBI200L-120 |