Part Details for 2SK4013 by Toshiba America Electronic Components
Overview of 2SK4013 by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for 2SK4013
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2SK4013
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TME | Transistor: N-MOSFET, unipolar, 800V, 6A, 45W, TO220FP Min Qty: 1 | 355 |
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$1.2800 / $1.9300 | Buy Now |
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LCSC | TO-220 MOSFETs ROHS | 7 |
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$2.6471 / $2.8006 | Buy Now |
Part Details for 2SK4013
2SK4013 CAD Models
2SK4013 Part Data Attributes
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2SK4013
Toshiba America Electronic Components
Buy Now
Datasheet
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2SK4013
Toshiba America Electronic Components
TRANSISTOR 6 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | SC-67 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 317 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 1.7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 30 pF | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |