Part Details for 2SK3878 by Toshiba America Electronic Components
Overview of 2SK3878 by Toshiba America Electronic Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK3878
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 900V, 1.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 36 |
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$6.4358 / $10.4364 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant | Europe - 40 |
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RFQ | |
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Sense Electronic Company Limited | TO-3P | 24000 |
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RFQ | |
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Win Source Electronics | Silicon N-Channel MOS Type Switching Regulator Applications / Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-3PN | 196208 |
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$0.6600 / $0.9900 | Buy Now |
Part Details for 2SK3878
2SK3878 CAD Models
2SK3878 Part Data Attributes:
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2SK3878
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
2SK3878
Toshiba America Electronic Components
TRANSISTOR 9 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power
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Pbfree Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | SC-65 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 778 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 1.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 27 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK3878
This table gives cross-reference parts and alternative options found for 2SK3878. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3878, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SK2611 | TRANSISTOR 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | 2SK3878 vs 2SK2611 |
SSH11N90 | Power Field-Effect Transistor, 11A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | 2SK3878 vs SSH11N90 |
STW7NA90 | 7A, 900V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | 2SK3878 vs STW7NA90 |