Part Details for 2SK3572-S-AZ by NEC Electronics Group
Overview of 2SK3572-S-AZ by NEC Electronics Group
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 2SK3572-ZK-E1-AY | Renesas Electronics Corporation | Switching N-Channel Power Mosfet | |
| 2SK3572-ZK-E1-AZ | Renesas Electronics Corporation | Switching N-Channel Power Mosfet | |
| 74AC11086D | Texas Instruments | Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 |
Part Details for 2SK3572-S-AZ
2SK3572-S-AZ CAD Models
2SK3572-S-AZ Part Data Attributes
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2SK3572-S-AZ
NEC Electronics Group
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Datasheet
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2SK3572-S-AZ
NEC Electronics Group
Power Field-Effect Transistor, 80A I(D), 20V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, 3 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Part Package Code | TO-262AA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0099 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK3572-S-AZ
This table gives cross-reference parts and alternative options found for 2SK3572-S-AZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3572-S-AZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRL3103PBF | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | 2SK3572-S-AZ vs IRL3103PBF |
| IRF3707ZSTRLPBF | Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | 2SK3572-S-AZ vs IRF3707ZSTRLPBF |
| IRF3707L | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | International Rectifier | 2SK3572-S-AZ vs IRF3707L |
| IRF3707ZSTRL | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | 2SK3572-S-AZ vs IRF3707ZSTRL |
| H7N0312LD | 85A, 30V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | 2SK3572-S-AZ vs H7N0312LD |
| IRF3707ZSTRLPBF | Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | 2SK3572-S-AZ vs IRF3707ZSTRLPBF |
| IRF3707ZCSTRRP | Power Field-Effect Transistor, 42A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | 2SK3572-S-AZ vs IRF3707ZCSTRRP |
| 2SK3134L | 75A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | 2SK3572-S-AZ vs 2SK3134L |
| IPP114N03LG | Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | 2SK3572-S-AZ vs IPP114N03LG |
| IRF3707ZSTRR | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | 2SK3572-S-AZ vs IRF3707ZSTRR |