Part Details for 2SK3530-01MR by Fuji Electric Co Ltd
Overview of 2SK3530-01MR by Fuji Electric Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2SK3530-01MR
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | Trans MOSFET N-CH Si 800V 7A 3-Pin(3+Tab) TO-220F / Fuji Power MOSFET SuperFAP-G series Target Specification | 1620 |
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RFQ |
Part Details for 2SK3530-01MR
2SK3530-01MR CAD Models
2SK3530-01MR Part Data Attributes:
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2SK3530-01MR
Fuji Electric Co Ltd
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Datasheet
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2SK3530-01MR
Fuji Electric Co Ltd
Power Field-Effect Transistor, 7A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 235.3 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 1.9 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK3530-01MR
This table gives cross-reference parts and alternative options found for 2SK3530-01MR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3530-01MR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SK1608 | Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Panasonic Electronic Components | 2SK3530-01MR vs 2SK1608 |
2SK2703 | Power Field-Effect Transistor, 10A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FM100, TO-3PF, 3 PIN | Sanken Electric Co Ltd | 2SK3530-01MR vs 2SK2703 |
2SK3702 | 18A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220ML, FULL PACK-3 | onsemi | 2SK3530-01MR vs 2SK3702 |
2SK2160 | Power Field-Effect Transistor, 7A I(D), 200V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN | SANYO Electric Co Ltd | 2SK3530-01MR vs 2SK2160 |
APT5020BVFRG | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Microsemi Corporation | 2SK3530-01MR vs APT5020BVFRG |
2SK3706 | Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, FULL PACK-3 | SANYO Electric Co Ltd | 2SK3530-01MR vs 2SK3706 |
2SK1432 | Power Field-Effect Transistor, 25A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, FULL PACK-3 | SANYO Electric Co Ltd | 2SK3530-01MR vs 2SK1432 |
2SK2378 | 13A, 200V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML, TO-220ML, 3 PIN | onsemi | 2SK3530-01MR vs 2SK2378 |
2SK850 | TRANSISTOR 35 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | 2SK3530-01MR vs 2SK850 |
APT41H50B | Power Field-Effect Transistor, 41A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | Microsemi Corporation | 2SK3530-01MR vs APT41H50B |