Part Details for 2SK3434-ZJ by NEC Electronics Group
Overview of 2SK3434-ZJ by NEC Electronics Group
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 2SK3434(0)-Z-E2-AZ | Renesas Electronics Corporation | Nch Single Power Mosfet 60V 48A 0.02Mohm Mp-25Z/To-220Smd | |
| 2SK3434(0)-Z-E1-AZ | Renesas Electronics Corporation | Nch Single Power Mosfet 60V 48A 0.02Mohm Mp-25Z/To-220Smd | |
| 2SK3434-Z-E1-AZ | Renesas Electronics Corporation | Nch Single Power Mosfet 60V 48A 0.02Mohm Mp-25Z/To-220Smd |
Part Details for 2SK3434-ZJ
2SK3434-ZJ CAD Models
2SK3434-ZJ Part Data Attributes
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2SK3434-ZJ
NEC Electronics Group
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Datasheet
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2SK3434-ZJ
NEC Electronics Group
Power Field-Effect Transistor, 48A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Category CO2 Kg | 8.8 | |
| Candidate List Date | 2010-01-13 | |
| EFUP | 10 | |
| Avalanche Energy Rating (Eas) | 78 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 48 A | |
| Drain-source On Resistance-Max | 0.031 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |