Part Details for 2SK3114-AZ by NEC Electronics Group
Overview of 2SK3114-AZ by NEC Electronics Group
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Robotics and Drones
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 2SK3114B-S17-AY | Renesas Electronics Corporation | Switching N Channel MOSFET, MP-45F, /Tube | |
| 2SK3114-S17-AZ | Renesas Electronics Corporation | Switching N Channel MOSFET, MP-45F, /Tube | |
| 2SK3114-AZ | Renesas Electronics Corporation | Switching N Channel MOSFET |
Part Details for 2SK3114-AZ
2SK3114-AZ CAD Models
2SK3114-AZ Part Data Attributes
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2SK3114-AZ
NEC Electronics Group
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Datasheet
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2SK3114-AZ
NEC Electronics Group
Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-45F, ISOLATED TO-220, 3 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Part Package Code | SFM | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 10.7 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 2.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SK3114-AZ
This table gives cross-reference parts and alternative options found for 2SK3114-AZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK3114-AZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK3114 | Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-45F, ISOLATED TO-220, 3 PIN | NEC Electronics Group | 2SK3114-AZ vs 2SK3114 |
| 2SK3114-AZ | Switching N Channel MOSFET, MP-45F, /Bag | Renesas Electronics Corporation | 2SK3114-AZ vs 2SK3114-AZ |