Part Details for 2SK2285 by Shindengen Electronic Manufacturing Co Ltd
Overview of 2SK2285 by Shindengen Electronic Manufacturing Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2SK2285
2SK2285 CAD Models
2SK2285 Part Data Attributes
|
2SK2285
Shindengen Electronic Manufacturing Co Ltd
Buy Now
Datasheet
|
Compare Parts:
2SK2285
Shindengen Electronic Manufacturing Co Ltd
Power Field-Effect Transistor, 15A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | |
Part Package Code | SFM | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
kg CO2e/kg | 8.8 | |
Average Weight (mg) | 1995.93 | |
CO2e (mg) | 17564.141 | |
Category CO2 Kg | 8.8 | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 240 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 35 W | |
Power Dissipation-Max (Abs) | 35 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 280 ns | |
Turn-on Time-Max (ton) | 90 ns |
Alternate Parts for 2SK2285
This table gives cross-reference parts and alternative options found for 2SK2285. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2285, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2SK2703 | Power Field-Effect Transistor, 10A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FM100, TO-3PF, 3 PIN | Sanken Electric Co Ltd | 2SK2285 vs 2SK2703 |
2SK1459LS | Power Field-Effect Transistor, 2.5A I(D), 900V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Electric Co Ltd | 2SK2285 vs 2SK1459LS |
2SK4194LS | Power Field-Effect Transistor, 6A I(D), 450V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Semiconductor Co Ltd | 2SK2285 vs 2SK4194LS |
2SK4179 | Power Field-Effect Transistor, 80A I(D), 75V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SANYO Semiconductor Co Ltd | 2SK2285 vs 2SK4179 |
2SK4196LS | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Electric Co Ltd | 2SK2285 vs 2SK4196LS |
IXTQ470P2 | Power Field-Effect Transistor, | Littelfuse Inc | 2SK2285 vs IXTQ470P2 |
2SK1723 | TRANSISTOR 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | 2SK2285 vs 2SK1723 |
APT5020BVR | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Microsemi Corporation | 2SK2285 vs APT5020BVR |
2SK2404 | Power Field-Effect Transistor, 5A I(D), 450V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN | SANYO Electric Co Ltd | 2SK2285 vs 2SK2404 |
2SK1250 | Power Field-Effect Transistor, 20A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | 2SK2285 vs 2SK1250 |