Datasheets
2SK1737 by: SANYO Electric Co Ltd

Power Field-Effect Transistor, 1.8A I(D), 100V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for 2SK1737 by SANYO Electric Co Ltd

Overview of 2SK1737 by SANYO Electric Co Ltd

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Part Details for 2SK1737

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2SK1737 Part Data Attributes

2SK1737 SANYO Electric Co Ltd
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2SK1737 SANYO Electric Co Ltd Power Field-Effect Transistor, 1.8A I(D), 100V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Obsolete
Ihs Manufacturer SANYO ELECTRIC CO LTD
Package Description IN-LINE, R-PSIP-T3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.8 A
Drain-source On Resistance-Max 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 7.2 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK1737

This table gives cross-reference parts and alternative options found for 2SK1737. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1737, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDP410BL 7A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments 2SK1737 vs NDP410BL
IRL510 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier 2SK1737 vs IRL510
FS5KMJ-2 Power Field-Effect Transistor, 5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN Powerex Power Semiconductors 2SK1737 vs FS5KMJ-2
FS5KMJ-2 Power Field-Effect Transistor, 5A I(D), 100V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FN, 3 PIN Mitsubishi Electric 2SK1737 vs FS5KMJ-2
BUK552-100B TRANSISTOR 8.5 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors 2SK1737 vs BUK552-100B
IRL510 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix 2SK1737 vs IRL510
MTP10N12L 10A, 120V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC 2SK1737 vs MTP10N12L
BUK552-100A TRANSISTOR 10 A, 100 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors 2SK1737 vs BUK552-100A

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