Datasheets
2SK1124 by: Toshiba America Electronic Components

TRANSISTOR 45 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

Part Details for 2SK1124 by Toshiba America Electronic Components

Overview of 2SK1124 by Toshiba America Electronic Components

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for 2SK1124

Part # Distributor Description Stock Price Buy
Bristol Electronics   297
RFQ

Part Details for 2SK1124

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2SK1124 Part Data Attributes

2SK1124 Toshiba America Electronic Components
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2SK1124 Toshiba America Electronic Components TRANSISTOR 45 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2SK1124

This table gives cross-reference parts and alternative options found for 2SK1124. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK1124, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK1549R Power Field-Effect Transistor, 20A I(D), 250V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Fuji Electric Co Ltd 2SK1124 vs 2SK1549R
2SK1903 Power Field-Effect Transistor, 25A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN SANYO Electric Co Ltd 2SK1124 vs 2SK1903
FS4VS-12 4A, 600V, 2.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S, 3 PIN Renesas Electronics Corporation 2SK1124 vs FS4VS-12
IXFR36N50P Power Field-Effect Transistor, 19A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN IXYS Corporation 2SK1124 vs IXFR36N50P
2SK2194 Power Field-Effect Transistor, 15A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN Shindengen Electronic Manufacturing Co Ltd 2SK1124 vs 2SK2194
2SK3689-01 Power Field-Effect Transistor, 16A I(D), 600V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Fuji Electric Co Ltd 2SK1124 vs 2SK3689-01
2SK2577 Power Field-Effect Transistor, 30A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220E, 3 PIN Panasonic Electronic Components 2SK1124 vs 2SK2577
2SK2793 Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FN, 3 PIN ROHM Semiconductor 2SK1124 vs 2SK2793
2SK644 TRANSISTOR 10 A, 450 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components 2SK1124 vs 2SK644
2SK3520-01MR Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Fuji Electric Co Ltd 2SK1124 vs 2SK3520-01MR

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