Part Details for 2SJ683 by SANYO Electric Co Ltd
Overview of 2SJ683 by SANYO Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2SJ683
2SJ683 CAD Models
2SJ683 Part Data Attributes:
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2SJ683
SANYO Electric Co Ltd
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Datasheet
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2SJ683
SANYO Electric Co Ltd
Power Field-Effect Transistor, 65A I(D), 60V, 0.0105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SANYO ELECTRIC CO LTD | |
Package Description | SMALL OUTLINE, R-PSSO-F2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 65 A | |
Drain-source On Resistance-Max | 0.0105 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 260 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SJ683
This table gives cross-reference parts and alternative options found for 2SJ683. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SJ683, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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ATP207 | Power Field-Effect Transistor, 65A I(D), 40V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ATPAK-3 | SANYO Semiconductor Co Ltd | 2SJ683 vs ATP207 |
ATP203-TL-H | N-Channel Power MOSFET, 30V, 75A, 8.2mOhm, Single ATPAK, DPAK (Single Gauge) / ATPAK, 3000-REEL | onsemi | 2SJ683 vs ATP203-TL-H |
ATP202-TL-H | N-Channel Power MOSFET, 30V, 50A, 12mΩ, DPAK (Single Gauge) / ATPAK, 3000-REEL | onsemi | 2SJ683 vs ATP202-TL-H |
ATP203 | Power Field-Effect Transistor, 75A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ATPAK-3 | SANYO Semiconductor Co Ltd | 2SJ683 vs ATP203 |
ATP202 | Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ATPAK, 3 PIN | SANYO Semiconductor Co Ltd | 2SJ683 vs ATP202 |