Part Details for 2SJ464 by Toshiba America Electronic Components
Overview of 2SJ464 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2SJ464
2SJ464 CAD Models
2SJ464 Part Data Attributes
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2SJ464
Toshiba America Electronic Components
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Datasheet
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2SJ464
Toshiba America Electronic Components
TRANSISTOR 18 A, 100 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Purpose Power
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | SC-67 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 937 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2SJ464
This table gives cross-reference parts and alternative options found for 2SJ464. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SJ464, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFP9141 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 19A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | 2SJ464 vs IRFP9141 |
| IRFP9140N | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | 2SJ464 vs IRFP9140N |
| IRFP9141 | Rochester Electronics LLC | Check for Price | 19A, 80V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 | 2SJ464 vs IRFP9141 |
| IRFP9140N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | 2SJ464 vs IRFP9140N |
| IRFP9141 | International Rectifier | Check for Price | Power Field-Effect Transistor, 19A I(D), 80V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2SJ464 vs IRFP9141 |
| IRFP9140NPBF | Infineon Technologies AG | $1.0670 | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | 2SJ464 vs IRFP9140NPBF |
| IRFP9141PBF | Infineon Technologies AG | Check for Price | 19A, 80V, 2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AC | 2SJ464 vs IRFP9141PBF |
| IRFP9141 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 19A I(D), 80V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 2SJ464 vs IRFP9141 |
| IRFP9140NPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | 2SJ464 vs IRFP9140NPBF |