Part Details for 2SJ166-T2B-AT by Renesas Electronics Corporation
Overview of 2SJ166-T2B-AT by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 2SJ166-T1B-A | Renesas Electronics Corporation | Power MOSFETs for Automotive, MM, / | |
| 2SJ166-T2B-A | Renesas Electronics Corporation | Power MOSFETs for Automotive |
Part Details for 2SJ166-T2B-AT
2SJ166-T2B-AT CAD Models
2SJ166-T2B-AT Part Data Attributes
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2SJ166-T2B-AT
Renesas Electronics Corporation
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Datasheet
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2SJ166-T2B-AT
Renesas Electronics Corporation
TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 0.1 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Surface Mount | YES |