Part Details for 2SJ128-Z-T1 by NEC Electronics America Inc
Overview of 2SJ128-Z-T1 by NEC Electronics America Inc
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SJ128-Z-E1-AZ | Renesas Electronics Corporation | P-Channel Silicon Power MOSFET For High Speed Switching | |
2SJ128(0)-Z-E1-AZ | Renesas Electronics Corporation | P-Channel Silicon Power MOSFET For High Speed Switching | |
2SJ128-Z-E2-AZ | Renesas Electronics Corporation | P-Channel Silicon Power MOSFET For High Speed Switching |
Part Details for 2SJ128-Z-T1
2SJ128-Z-T1 CAD Models
2SJ128-Z-T1 Part Data Attributes
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2SJ128-Z-T1
NEC Electronics America Inc
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2SJ128-Z-T1
NEC Electronics America Inc
Power Field-Effect Transistor, 2A I(D), 100V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MP-3, SC-63, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEC ELECTRONICS AMERICA INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 20 W | |
Pulsed Drain Current-Max (IDM) | 8 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |