Part Details for 2SD669AB(TO-126) by Unisonic Technologies Co Ltd
Overview of 2SD669AB(TO-126) by Unisonic Technologies Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
ADC1038CIWM | Rochester Electronics LLC | ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 | |
TL505CN | Rochester Electronics LLC | ADC, Dual-Slope, 10-Bit, 1 Func, 1 Channel, Serial Access, BIMOS, PDIP14, PACKAGE-14 | |
ML2258CIQ | Rochester Electronics LLC | ADC, Successive Approximation, 8-Bit, 1 Func, 8 Channel, Parallel, 8 Bits Access, PQCC28, PLASTIC, LCC-28 |
Part Details for 2SD669AB(TO-126)
2SD669AB(TO-126) CAD Models
2SD669AB(TO-126) Part Data Attributes
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2SD669AB(TO-126)
Unisonic Technologies Co Ltd
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Datasheet
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2SD669AB(TO-126)
Unisonic Technologies Co Ltd
Transistor
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Part Life Cycle Code | Active | |
Ihs Manufacturer | UNISONIC TECHNOLOGIES CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Collector Current-Max (IC) | 1.5 A | |
Collector-Base Capacitance-Max | 14 pF | |
Collector-Emitter Voltage-Max | 160 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 60 | |
JEDEC-95 Code | TO-126 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 1 W | |
Power Dissipation-Max (Abs) | 20 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 140 MHz | |
VCEsat-Max | 1 V |