Part Details for 2SA812-M5 by Yangzhou Yangjie Electronics Co Ltd
Overview of 2SA812-M5 by Yangzhou Yangjie Electronics Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 2SA812A-T1B-AT | Renesas Electronics Corporation | Small Signal Bipolar Transistors, MM, / | |
| 2SA812(0)-T1B-AT | Renesas Electronics Corporation | Small Signal Bipolar Transistors | |
| 2SA812-T2B-A | Renesas Electronics Corporation | Small Signal Bipolar Transistors, MM, / |
Price & Stock for 2SA812-M5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2SA812-M5-YAN
|
TME | Transistor: PNP, bipolar, 50V, 0.1A, 0.2W, SOT23 Min Qty: 25 | 0 |
|
$0.0105 / $0.0320 | RFQ |
Part Details for 2SA812-M5
2SA812-M5 CAD Models
2SA812-M5 Part Data Attributes
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2SA812-M5
Yangzhou Yangjie Electronics Co Ltd
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Datasheet
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2SA812-M5
Yangzhou Yangjie Electronics Co Ltd
Small Signal Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 4.5 pF | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 135 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 180 MHz | |
| VCEsat-Max | 0.3 V |