Datasheets
2N7611U8 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for 2N7611U8 by Infineon Technologies AG

Overview of 2N7611U8 by Infineon Technologies AG

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Applications Industrial Automation

Part Details for 2N7611U8

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2N7611U8 Part Data Attributes

2N7611U8 Infineon Technologies AG
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2N7611U8 Infineon Technologies AG Power Field-Effect Transistor,
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Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description CHIP CARRIER, R-CBCC-N3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 17.6 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 23.2 W
Pulsed Drain Current-Max (IDM) 12.8 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 67 ns
Turn-on Time-Max (ton) 52 ns

Alternate Parts for 2N7611U8

This table gives cross-reference parts and alternative options found for 2N7611U8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7611U8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

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IRHLNM7S7214 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 2N7611U8 vs IRHLNM7S7214