Part Details for 2N6790 by Fairchild Semiconductor Corporation
Overview of 2N6790 by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2N6790
2N6790 CAD Models
2N6790 Part Data Attributes
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2N6790
Fairchild Semiconductor Corporation
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Datasheet
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2N6790
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 20 W | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2N6790
This table gives cross-reference parts and alternative options found for 2N6790. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6790, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N6790 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6790 vs 2N6790 |
IRFF220 | Rochester Electronics LLC | Check for Price | 3.5A, 200V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6790 vs IRFF220 |
IRFF220 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | 2N6790 vs IRFF220 |
2N6790 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 2N6790 vs 2N6790 |
IRFF220 | Motorola Mobility LLC | Check for Price | 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 | 2N6790 vs IRFF220 |
JANTX2N6790 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | 2N6790 vs JANTX2N6790 |
2N6790 | Motorola Mobility LLC | Check for Price | 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 | 2N6790 vs 2N6790 |
IRFF220 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | 2N6790 vs IRFF220 |
2N6790 | Intersil Corporation | Check for Price | 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 2N6790 vs 2N6790 |