Datasheets
2N6790 by:

Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

Part Details for 2N6790 by Fairchild Semiconductor Corporation

Overview of 2N6790 by Fairchild Semiconductor Corporation

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Part Details for 2N6790

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2N6790 Part Data Attributes

2N6790 Fairchild Semiconductor Corporation
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2N6790 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N6790

This table gives cross-reference parts and alternative options found for 2N6790. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6790, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N6790 Unitrode Corp (RETIRED) Check for Price Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, 2N6790 vs 2N6790
IRFF220 Rochester Electronics LLC Check for Price 3.5A, 200V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6790 vs IRFF220
IRFF220 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 2N6790 vs IRFF220
2N6790 Unitrode Corporation Check for Price Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, 2N6790 vs 2N6790
IRFF220 Motorola Mobility LLC Check for Price 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 2N6790 vs IRFF220
JANTX2N6790 Microsemi Corporation Check for Price Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, 2N6790 vs JANTX2N6790
2N6790 Motorola Mobility LLC Check for Price 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 2N6790 vs 2N6790
IRFF220 TT Electronics Power and Hybrid / Semelab Limited Check for Price 3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6790 vs IRFF220
2N6790 Intersil Corporation Check for Price 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2N6790 vs 2N6790
Part Number Manufacturer Composite Price Description Compare
IRFF220-JQR-B TT Electronics Resistors Check for Price Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6790 vs IRFF220-JQR-B
IRFF220 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6790 vs IRFF220
JANTXV2N6790 Defense Logistics Agency Check for Price Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, 2N6790 vs JANTXV2N6790
IRFF220R Intersil Corporation Check for Price 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2N6790 vs IRFF220R
IRFF223 Intersil Corporation Check for Price 3A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2N6790 vs IRFF223
IRFF220-JQR-B TT Electronics Power and Hybrid / Semelab Limited Check for Price 3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6790 vs IRFF220-JQR-B
IRFF223 Rochester Electronics LLC Check for Price 3A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2N6790 vs IRFF223
IRFF220-JQR-BR1 TT Electronics Power and Hybrid / Semelab Limited Check for Price 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN 2N6790 vs IRFF220-JQR-BR1
JANTX2N6790 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN 2N6790 vs JANTX2N6790
IRFF222 Rochester Electronics LLC Check for Price 3A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2N6790 vs IRFF222

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