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Transistors / Power Field-Effect Transistors / 2N6767
Datasheets
2N6767 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for 2N6767 by Infineon Technologies AG

Overview of 2N6767 by Infineon Technologies AG

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Part Details for 2N6767

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2N6767 Part Data Attributes

Parametric Data
2N6767 Infineon Technologies AG
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2N6767 Infineon Technologies AG Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 12 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

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