2N6531-6265
Description: Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Overview of 2N6531-6265 by Harris Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
54FCT162652TEB Renesas Electronics Corporation 16-BIT TRANSCEIVER REG.

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Part Data Attributes for 2N6531-6265 by Harris Semiconductor

2N6531-6265
Harris Semiconductor
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
COLLECTOR
Collector Current-Max (IC)
8 A
Collector-Base Capacitance-Max
200 pF
Collector-Emitter Voltage-Max
100 V
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)
100
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Power Dissipation Ambient-Max
65 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
VCEsat-Max
3 V
Want to compare parts?
  1. 2N6531-6265
    Harris Semiconductor
    Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
    VS

Alternate Parts for 2N6531-6265

This table gives cross-reference parts and alternative options found for 2N6531-6265. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6531-6265, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N6531-6258 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N6531-6265 vs 2N6531-6258
2N6531-6265 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation 2N6531-6265 vs 2N6531-6265
2N6531-DR6274 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N6531-6265 vs 2N6531-DR6274
2N6531-DR6269 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation 2N6531-6265 vs 2N6531-DR6269
2N6531-DR6274 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation 2N6531-6265 vs 2N6531-DR6274
2N6531-DR6280 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N6531-6265 vs 2N6531-DR6280
2N6531-6255 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation 2N6531-6265 vs 2N6531-6255
2N6532-DR6274 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation 2N6531-6265 vs 2N6532-DR6274
2N6531-6226 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N6531-6265 vs 2N6531-6226
2N6532-6200 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation 2N6531-6265 vs 2N6532-6200
Part Number Description Manufacturer Compare
2N6532-DR6260 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation 2N6531-6265 vs 2N6532-DR6260
2N6532-DR6274 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation 2N6531-6265 vs 2N6532-DR6274
2N6532-DR6280 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N6531-6265 vs 2N6532-DR6280
2N6531-DR6274 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N6531-6265 vs 2N6531-DR6274
2N6531-DR6269 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation 2N6531-6265 vs 2N6531-DR6269
2N6532-6263 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N6531-6265 vs 2N6532-6263
2N6531-DR6259 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N6531-6265 vs 2N6531-DR6259
2N6532-DR6269 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation 2N6531-6265 vs 2N6532-DR6269
2N6532-6226 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N6531-6265 vs 2N6532-6226
2N6531-6203 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N6531-6265 vs 2N6531-6203

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