Part Details for 2N60LL-TND-R by Unisonic Technologies Co Ltd
Overview of 2N60LL-TND-R by Unisonic Technologies Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2N60LL-TND-R
2N60LL-TND-R CAD Models
2N60LL-TND-R Part Data Attributes
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2N60LL-TND-R
Unisonic Technologies Co Ltd
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Datasheet
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2N60LL-TND-R
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252D, 3/2 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | UNISONIC TECHNOLOGIES CO LTD | |
| Package Description | TO-252D, 3/2 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N60LL-TND-R
This table gives cross-reference parts and alternative options found for 2N60LL-TND-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N60LL-TND-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PJU2N60 | Power Field-Effect Transistor, 2A I(D), 600V, 4.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, PLASTIC PACKAGE-3 | PanJit Semiconductor | 2N60LL-TND-R vs PJU2N60 |
| 2N60LG-TMA-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE, TO-251L, 3 PIN | Unisonic Technologies Co Ltd | 2N60LL-TND-R vs 2N60LG-TMA-T |
| SMK0260IS | 2A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, IPAK-3 | Kodenshi Sensing | 2N60LL-TND-R vs SMK0260IS |
| L2N60D | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3/2 PIN | LRC Leshan Radio Co Ltd | 2N60LL-TND-R vs L2N60D |
| 2N60LL-T2Q-R | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Unisonic Technologies Co Ltd | 2N60LL-TND-R vs 2N60LL-T2Q-R |
| 2N65L-TMA-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251L, 3 PIN | Unisonic Technologies Co Ltd | 2N60LL-TND-R vs 2N65L-TMA-T |
| 2N65LG-TA3-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | 2N60LL-TND-R vs 2N65LG-TA3-T |
| 2N65G-TMS-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S, 3 PIN | Unisonic Technologies Co Ltd | 2N60LL-TND-R vs 2N65G-TMS-T |
| 2N60LG-TND-R | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252D, 3/2 PIN | Unisonic Technologies Co Ltd | 2N60LL-TND-R vs 2N60LG-TND-R |
| 2N60L-TN3-R | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | 2N60LL-TND-R vs 2N60L-TN3-R |