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Transistors Power Bipolar Transistors 2N5657G

Transistors
2N5657G
onsemi
Description: 0.5 A, 350 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX

Overview of 2N5657G by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for 2N5657G by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # 74AK3655
Newark Transistor, Bipol, Npn, 350V, To-225-3 |Onsemi 2N5657G RoHS: Not Compliant Min Qty: 1270 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $0.3290
  • 2,500 $0.2670
  • 10,000 $0.2590
$0.2590 / $0.3290 Buy Now
DISTI # 26K5297
Newark Bipolar Transistor, Npn, 350V, To-225, Transistor Polarity:Npn, Collector Emitter Voltage Max:350V, Continuous Collector Current:500Ma, Power Dissipation:20W, Transistor Mounting:Through Hole, No. Of Pins:3Pins, Qualification:- Rohs Compliant: Yes |Onsemi 2N5657G RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # V36:1790_07291822
Arrow Electronics Trans GP BJT NPN 350V 0.5A 20000mW 3-Pin(3+Tab) TO-225 Box RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 2133 Americas - 21
  • 1 $0.2222
$0.2222 Buy Now
Quest Components   359
  • 1 $1.0000
  • 26 $0.6000
  • 101 $0.5000
$0.5000 / $1.0000 Buy Now
DISTI # C1S541901743639
Chip1Stop Bipolar Transistor (BJT) RoHS: Compliant 21
  • 5 $0.3730
$0.3730 Buy Now

CAD Models for 2N5657G by onsemi
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Part Data Attributes for 2N5657G by onsemi
Parametric Data

2N5657G
onsemi
Buy Now
-
-
Pbfree Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
ONSEMI
Part Package Code
TO-225
Package Description
CASE 77-09, 3 PIN
Pin Count
3
Manufacturer Package Code
77-09
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
onsemi
Collector Current-Max (IC)
0.5 A
Collector-Emitter Voltage-Max
350 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
5
JEDEC-95 Code
TO-225AA
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
20 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
10 MHz
Want to compare parts?
  1. 2N5657G
    onsemi
    0.5 A, 350 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX
    VS

Alternate Parts for 2N5657G

This table gives cross-reference parts and alternative options found for 2N5657G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5657G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N5657 0.5 A, 350 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX onsemi 2N5657G vs 2N5657
Part Number Description Manufacturer Compare
JANTXV2N5666 Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin, TO-5, 2 PIN Silicon Transistor Corporation 2N5657G vs JANTXV2N5666
BD680 PNP power Darlington transistor STMicroelectronics 2N5657G vs BD680
2N5666S Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin, HERMETIC SEALED, METAL CAN-3 Microsemi Corporation 2N5657G vs 2N5666S
BDX47 TRANSISTOR 1 A, PNP, Si, POWER TRANSISTOR, TO-126, PLASTIC, TO-126, 3 PIN, BIP General Purpose Power NXP Semiconductors 2N5657G vs BDX47
BD234 Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, Central Semiconductor Corp 2N5657G vs BD234
D41K3-TYPE12 Power Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-202AB, Plastic/Epoxy, 3 Pin Harris Semiconductor 2N5657G vs D41K3-TYPE12
TIP115 Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Continental Device India Ltd 2N5657G vs TIP115
BDW54A Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3 Bourns Inc 2N5657G vs BDW54A
TIP117 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN KEC 2N5657G vs TIP117
TIP107 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Continental Device India Ltd 2N5657G vs TIP107

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