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Transistors / IGBTs / 2MBI150L-060
Datasheets
2MBI150L-060 by: Fuji Electric Co Ltd

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M219, 7 PIN

Part Details for 2MBI150L-060 by Fuji Electric Co Ltd

Overview of 2MBI150L-060 by Fuji Electric Co Ltd

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Price & Stock for 2MBI150L-060

Part # Distributor Description Stock Price Buy
Quest Components INSULATED GATE BIPOLAR TRANSISTOR, 150A I(C), 600V V(BR)CES, N-CHANNEL 3
  • 1 $123.5000
$123.5000 Buy Now

Part Details for 2MBI150L-060

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2MBI150L-060 Part Data Attributes

Parametric Data
2MBI150L-060 Fuji Electric Co Ltd
Buy Now Datasheet
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2MBI150L-060 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M219, 7 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJI ELECTRIC CO LTD
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature HIGH SPEED SWITCHING
Collector Current-Max (IC) 150 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 350 ns
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1200 W
Power Dissipation-Max (Abs) 600 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 3.5 V

Alternate Parts for 2MBI150L-060

This table gives cross-reference parts and alternative options found for 2MBI150L-060. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2MBI150L-060, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MG100H2YS1 TRANSISTOR 100 A, 500 V, N-CHANNEL IGBT, 2-94C1A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI150L-060 vs MG100H2YS1
CM300DY-12H Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Mitsubishi Electric 2MBI150L-060 vs CM300DY-12H
MG400J2YS50 TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, 2-109D1A, 8 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI150L-060 vs MG400J2YS50
1MBI600NP-060 Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M128, 4 PIN Fuji Electric Co Ltd 2MBI150L-060 vs 1MBI600NP-060
BSM400GB60DN2 Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, Siemens 2MBI150L-060 vs BSM400GB60DN2
APTGT300A60G Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc 2MBI150L-060 vs APTGT300A60G
BSM75GB60DLC Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG 2MBI150L-060 vs BSM75GB60DLC
FMG2G150US60 Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, PLASTIC, 7PM-HA, 7 PIN Fairchild Semiconductor Corporation 2MBI150L-060 vs FMG2G150US60
MG300J2YS50 TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, 2-109C1A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 2MBI150L-060 vs MG300J2YS50
2MBI100F-060 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN Fuji Electric Co Ltd 2MBI150L-060 vs 2MBI100F-060

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