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DIODE 30.5 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, 1-3G1F, SC-59, 3 PIN, Variable Capacitance Diode
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1SV228
Toshiba America Electronic Components
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Datasheet
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1SV228
Toshiba America Electronic Components
DIODE 30.5 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, 1-3G1F, SC-59, 3 PIN, Variable Capacitance Diode
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | SC-59 | |
Package Description | R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Samacsys Manufacturer | Toshiba | |
Additional Feature | CAPACITANCE MATCHED TO 2.5% | |
Breakdown Voltage-Min | 30 V | |
Configuration | COMMON CATHODE, 2 ELEMENTS | |
Diode Cap Tolerance | 6.55% | |
Diode Capacitance Ratio-Min | 2.1 | |
Diode Capacitance-Nom | 30.5 pF | |
Diode Element Material | SILICON | |
Diode Type | VARIABLE CAPACITANCE DIODE | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 2 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Rep Pk Reverse Voltage-Max | 15 V | |
Reverse Current-Max | 0.01 µA | |
Reverse Test Voltage | 15 V | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Variable Capacitance Diode Classification | ABRUPT |
This table gives cross-reference parts and alternative options found for 1SV228. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1SV228, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BB804W212 | DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-3, Variable Capacitance Diode | NXP Semiconductors | 1SV228 vs BB804W212 |
BB804-0 | DIODE VHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | NXP Semiconductors | 1SV228 vs BB804-0 |
HVM27WK | 57pF, 20V, SILICON, VARIABLE CAPACITANCE DIODE, MPAK-3 | Renesas Electronics Corporation | 1SV228 vs HVM27WK |
BB804R212 | DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | NXP Semiconductors | 1SV228 vs BB804R212 |
BB804G215 | DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | NXP Semiconductors | 1SV228 vs BB804G215 |
BB914 | Variable Capacitance Diode, 43.75pF C(T), 18V, Silicon, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | 1SV228 vs BB914 |
MA4ST407CK | VARACTOR DIODE,DUAL, COMMON CATHODE,33PF C(T),SOT-23 | TE Connectivity | 1SV228 vs MA4ST407CK |
BB201T/R | DIODE 95 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB, PLASTIC PACKAGE-3, Variable Capacitance Diode | NXP Semiconductors | 1SV228 vs BB201T/R |
BB804Y212 | DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | NXP Semiconductors | 1SV228 vs BB804Y212 |
MA4ST404CK-T | VARACTOR DIODE,DUAL, COMMON CATHODE,18PF C(T),SOT-23 | TE Connectivity | 1SV228 vs MA4ST404CK-T |