Datasheets
1SS315TPH3 by: Toshiba America Electronic Components

DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode

Part Details for 1SS315TPH3 by Toshiba America Electronic Components

Overview of 1SS315TPH3 by Toshiba America Electronic Components

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Applications Consumer Electronics Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

Price & Stock for 1SS315TPH3

Part # Distributor Description Stock Price Buy
Quest Components MIXER DIODE, ULTRA HIGH FREQUENCY, SILICON 2782
  • 1 $0.3084
  • 293 $0.1439
  • 1,391 $0.1285
$0.1285 / $0.3084 Buy Now
Quest Components MIXER DIODE, ULTRA HIGH FREQUENCY, SILICON 973
  • 1 $0.5500
  • 183 $0.2750
  • 728 $0.2200
$0.2200 / $0.5500 Buy Now

Part Details for 1SS315TPH3

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1SS315TPH3 Part Data Attributes

1SS315TPH3 Toshiba America Electronic Components
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1SS315TPH3 Toshiba America Electronic Components DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode
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Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description R-PDSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.60
Configuration SINGLE
Diode Element Material SILICON
Diode Type MIXER DIODE
Frequency Band ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 125 °C
Output Current-Max 30 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Reverse Current-Max 25 µA
Surface Mount YES
Technology SCHOTTKY
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED