Part Details for 1SS269TE85R by Toshiba America Electronic Components
Overview of 1SS269TE85R by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for 1SS269TE85R
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | Mixer Diode, Very High Frequency, Silicon RoHS: Not Compliant |
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RFQ |
Part Details for 1SS269TE85R
1SS269TE85R CAD Models
1SS269TE85R Part Data Attributes
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1SS269TE85R
Toshiba America Electronic Components
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Datasheet
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1SS269TE85R
Toshiba America Electronic Components
DIODE SILICON, VHF BAND, MIXER DIODE, Microwave Mixer Diode
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | R-PDSO-G3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.60 | |
| Breakdown Voltage-Min | 30 V | |
| Configuration | COMMON ANODE, 2 ELEMENTS | |
| Diode Capacitance-Max | 1.2 pF | |
| Diode Element Material | SILICON | |
| Diode Type | MIXER DIODE | |
| Forward Voltage-Max (VF) | 0.85 V | |
| Frequency Band | VERY HIGH FREQUENCY | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 2 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 125 °C | |
| Output Current-Max | 50 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Reverse Current-Max | 0.1 µA | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |