Transistors
1N65L-TM3-T
Unisonic Technologies Co Ltd
Description: Power Field-Effect Transistor, 1.2A I(D), 650V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE PACKAGE-3

Overview of 1N65L-TM3-T by Unisonic Technologies Co Ltd

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Where used in Applications: Space Technology Aerospace and Defense Energy and Power Systems

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Part Data Attributes for 1N65L-TM3-T by Unisonic Technologies Co Ltd

1N65L-TM3-T
Unisonic Technologies Co Ltd
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
UNISONIC TECHNOLOGIES CO LTD
Part Package Code
TO-251
Package Description
LEAD FREE PACKAGE-3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
50 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
Drain Current-Max (ID)
1.2 A
Drain-source On Resistance-Max
11.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
4.8 A
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
80 ns
Want to compare parts?
  1. 1N65L-TM3-T
    Unisonic Technologies Co Ltd
    Power Field-Effect Transistor, 1.2A I(D), 650V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE PACKAGE-3
    VS

Alternate Parts for 1N65L-TM3-T

This table gives cross-reference parts and alternative options found for 1N65L-TM3-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N65L-TM3-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
1N65G-TM3-T Power Field-Effect Transistor, 1.2A I(D), 650V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd 1N65L-TM3-T vs 1N65G-TM3-T
Part Number Description Manufacturer Compare
1N65L-TN3-R Power Field-Effect Transistor, 1.2A I(D), 650V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd 1N65L-TM3-T vs 1N65L-TN3-R
1N60G-TM3-T Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, Unisonic Technologies Co Ltd 1N65L-TM3-T vs 1N60G-TM3-T
1N60L-TM3-T Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, Unisonic Technologies Co Ltd 1N65L-TM3-T vs 1N60L-TM3-T
1N65G-TN3-R Power Field-Effect Transistor, 1.2A I(D), 650V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd 1N65L-TM3-T vs 1N65G-TN3-R
1N65G-TM3-T Power Field-Effect Transistor, 1.2A I(D), 650V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd 1N65L-TM3-T vs 1N65G-TM3-T
FQP1N60J69Z Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation 1N65L-TM3-T vs FQP1N60J69Z

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