Part Details for 1N5804E3 by Microsemi Corporation
Overview of 1N5804E3 by Microsemi Corporation
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Part Details for 1N5804E3
1N5804E3 CAD Models
1N5804E3 Part Data Attributes
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1N5804E3
Microsemi Corporation
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1N5804E3
Microsemi Corporation
Rectifier Diode, Avalanche, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A PACKAGE-2
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | ROHS COMPLIANT, HERMETIC SEALED, GLASS, A PACKAGE-2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 0.875 V | |
JESD-30 Code | O-LALF-W2 | |
JESD-609 Code | e3 | |
Non-rep Pk Forward Current-Max | 35 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 1 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Rep Pk Reverse Voltage-Max | 100 V | |
Reverse Recovery Time-Max | 0.025 µs | |
Surface Mount | NO | |
Technology | AVALANCHE | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |