Part Details for 1N5407GB0 by Taiwan Semiconductor
Overview of 1N5407GB0 by Taiwan Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 1N5407GB0
1N5407GB0 CAD Models
1N5407GB0 Part Data Attributes
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1N5407GB0
Taiwan Semiconductor
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Datasheet
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1N5407GB0
Taiwan Semiconductor
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | HIGH RELIABILITY, LOW POWER LOSS | |
Application | EFFICIENCY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1 V | |
JEDEC-95 Code | DO-201AD | |
JESD-30 Code | O-PALF-W2 | |
JESD-609 Code | e3 | |
Non-rep Pk Forward Current-Max | 125 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 3 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Rep Pk Reverse Voltage-Max | 800 V | |
Reverse Current-Max | 5 µA | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |
Alternate Parts for 1N5407GB0
This table gives cross-reference parts and alternative options found for 1N5407GB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5407GB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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1N5407G-B | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 | Diodes Incorporated | 1N5407GB0 vs 1N5407G-B |
1N5407GHA0 | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GB0 vs 1N5407GHA0 |
1N5407GHX0 | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GB0 vs 1N5407GHX0 |
1N5407GA0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GB0 vs 1N5407GA0G |
1N5407GHA0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GB0 vs 1N5407GHA0G |
1N5407G-KB0G | Rectifier Diode, | Taiwan Semiconductor | 1N5407GB0 vs 1N5407G-KB0G |
1N5407G | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | Diodes Incorporated | 1N5407GB0 vs 1N5407G |
1N5407G | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, GREEN, PLASTIC PACKAGE-2 | Taiwan Semiconductor | 1N5407GB0 vs 1N5407G |
1N5407GB0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GB0 vs 1N5407GB0G |
1N5407G | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Formosa Microsemi Co Ltd | 1N5407GB0 vs 1N5407G |