Datasheets
1N5407GB0 by: Taiwan Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,

Part Details for 1N5407GB0 by Taiwan Semiconductor

Overview of 1N5407GB0 by Taiwan Semiconductor

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Part Details for 1N5407GB0

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1N5407GB0 Part Data Attributes

1N5407GB0 Taiwan Semiconductor
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1N5407GB0 Taiwan Semiconductor Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code DO-201AD
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 125 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 3 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Rep Pk Reverse Voltage-Max 800 V
Reverse Current-Max 5 µA
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL

Alternate Parts for 1N5407GB0

This table gives cross-reference parts and alternative options found for 1N5407GB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5407GB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1N5407G-B Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 Diodes Incorporated 1N5407GB0 vs 1N5407G-B
1N5407GHA0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs 1N5407GHA0
1N5407GHX0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs 1N5407GHX0
1N5407GA0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs 1N5407GA0G
1N5407GHA0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs 1N5407GHA0G
1N5407G-KB0G Rectifier Diode, Taiwan Semiconductor 1N5407GB0 vs 1N5407G-KB0G
1N5407G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 Diodes Incorporated 1N5407GB0 vs 1N5407G
1N5407G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, GREEN, PLASTIC PACKAGE-2 Taiwan Semiconductor 1N5407GB0 vs 1N5407G
1N5407GB0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs 1N5407GB0G
1N5407G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Formosa Microsemi Co Ltd 1N5407GB0 vs 1N5407G
Part Number Description Manufacturer Compare
RGP30K-TP Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN Micro Commercial Components 1N5407GB0 vs RGP30K-TP
HER307G-KB0G Rectifier Diode, Taiwan Semiconductor 1N5407GB0 vs HER307G-KB0G
HER307GR0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs HER307GR0
HER307GHX0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs HER307GHX0
HER307GHX0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs HER307GHX0G
FR306GHR0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs FR306GHR0G
1N5627GPTR Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, PLASTIC PACKAGE-2 Fagor Electrónica 1N5407GB0 vs 1N5627GPTR
1N5627GP/91-E3 DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode Vishay Semiconductors 1N5407GB0 vs 1N5627GP/91-E3
FR306GX0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs FR306GX0G
1N5407GHB0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GB0 vs 1N5407GHB0G

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