1N5406GX0G
Taiwan Semiconductor
Description: Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,

Overview of 1N5406GX0G by Taiwan Semiconductor

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Where used in Applications: Energy and Power Systems Automotive

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Part Data Attributes for 1N5406GX0G by Taiwan Semiconductor

1N5406GX0G
Taiwan Semiconductor
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
Package Description
O-PALF-W2
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.10.00.80
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Application
EFFICIENCY
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
JEDEC-95 Code
DO-201AD
JESD-30 Code
O-PALF-W2
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
125 A
Number of Elements
1
Number of Phases
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
3 A
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
LONG FORM
Rep Pk Reverse Voltage-Max
600 V
Reverse Current-Max
5 µA
Surface Mount
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
WIRE
Terminal Position
AXIAL
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  1. 1N5406GX0G
    Taiwan Semiconductor
    Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
    VS

Alternate Parts for 1N5406GX0G

This table gives cross-reference parts and alternative options found for 1N5406GX0G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5406GX0G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
1N5406GA0G Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5406GX0G vs 1N5406GA0G
1N5406G-T Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 Diodes Incorporated 1N5406GX0G vs 1N5406G-T
1N5406GB0 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5406GX0G vs 1N5406GB0
1N5406GR0G Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5406GX0G vs 1N5406GR0G
1N5406GHX0G Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5406GX0G vs 1N5406GHX0G
1N5406GX0 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5406GX0G vs 1N5406GX0
1N5406G Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27, HY Electronic Corp 1N5406GX0G vs 1N5406G
1N5406G Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 Diodes Incorporated 1N5406GX0G vs 1N5406G
1N5406GHX0 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5406GX0G vs 1N5406GHX0
1N5406G-B Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 Diodes Incorporated 1N5406GX0G vs 1N5406G-B
Part Number Description Manufacturer Compare
FR305GH32-1 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Rectron Semiconductor 1N5406GX0G vs FR305GH32-1
FR305GU23 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Rectron Semiconductor 1N5406GX0G vs FR305GU23
SF38GB0G Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5406GX0G vs SF38GB0G
SF38GHR0 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5406GX0G vs SF38GHR0
HER306GX0G Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5406GX0G vs HER306GX0G
RGP30J Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 Gulfsemi 1N5406GX0G vs RGP30J
SF30JG Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 Diodes Incorporated 1N5406GX0G vs SF30JG
RGP30JZ Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27, Galaxy Microelectronics 1N5406GX0G vs RGP30JZ
ER306_B0_00001 Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, HALOGEN FREE, HERMETIC SEALED, PLASTIC PACKAGE-2 PanJit Semiconductor 1N5406GX0G vs ER306_B0_00001
RGP30J-E3/73 DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode Vishay Semiconductors 1N5406GX0G vs RGP30J-E3/73

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