Part Details for 1N5139 by International Semiconductor Inc
Overview of 1N5139 by International Semiconductor Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 1N5139
1N5139 CAD Models
1N5139 Part Data Attributes:
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1N5139
International Semiconductor Inc
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Datasheet
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1N5139
International Semiconductor Inc
Variable Capacitance Diode, 6.8pF C(T), 65V, Silicon, DO-7
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL SEMICONDUCTOR INC | |
Package Description | O-LALF-W2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | HIGH Q, HIGH VOLTAGE, LOW LEAKAGE CURRENT | |
Breakdown Voltage-Min | 65 V | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Cap Tolerance | 10% | |
Diode Capacitance Ratio-Min | 2.7 | |
Diode Capacitance-Nom | 6.8 pF | |
Diode Element Material | SILICON | |
Diode Type | VARIABLE CAPACITANCE DIODE | |
JEDEC-95 Code | DO-7 | |
JESD-30 Code | O-LALF-W2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Power Dissipation-Max | 0.4 W | |
Qualification Status | Not Qualified | |
Quality Factor-Min | 350 | |
Rep Pk Reverse Voltage-Max | 60 V | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | AXIAL | |
Variable Capacitance Diode Classification | ABRUPT |
Alternate Parts for 1N5139
This table gives cross-reference parts and alternative options found for 1N5139. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5139, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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1N5139 | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 60V, Silicon, Abrupt, DO-7, | API Technologies Corp | 1N5139 vs 1N5139 |
JANTXV1N5139A | Variable Capacitance Diode, 6.8pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 | Cobham PLC | 1N5139 vs JANTXV1N5139A |
JAN1N5139A | Variable Capacitance Diode, 6.8pF C(T), 60V, Silicon, DO-7, GLASS PACKAGE-2 | Telcom Semiconductor Inc | 1N5139 vs JAN1N5139A |
1N5139 | HF-UHF BAND, 6.8pF, 60V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-204AA | Motorola Mobility LLC | 1N5139 vs 1N5139 |
1N5139A | 6.8pF, 65V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2 | Aeroflex Inc | 1N5139 vs 1N5139A |
1N5139A | Variable Capacitance Diode, 6.8pF C(T), 65V, Silicon, DO-7 | International Semiconductor Inc | 1N5139 vs 1N5139A |
1N5139A | Variable Capacitance Diode, 6.8pF C(T), 60V, Silicon, Abrupt, DO-7 | Microsemi Corporation | 1N5139 vs 1N5139A |
1N5139 | Variable Capacitance Diode, 6.8pF C(T), 60V, Silicon, Abrupt, DO-7 | Microsemi Corporation | 1N5139 vs 1N5139 |
JANTXV1N5139A | Variable Capacitance Diode, 6.8pF C(T), 60V, Silicon, DO-7, GLASS PACKAGE-2 | CRYSTALONICS Inc | 1N5139 vs JANTXV1N5139A |