Part Details for 1N4151-GT3 by Sangdest Microelectronics (Nanjing) Co Ltd
Overview of 1N4151-GT3 by Sangdest Microelectronics (Nanjing) Co Ltd
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Applications
Space Technology
Aerospace and Defense
Part Details for 1N4151-GT3
1N4151-GT3 CAD Models
1N4151-GT3 Part Data Attributes
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1N4151-GT3
Sangdest Microelectronics (Nanjing) Co Ltd
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Datasheet
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1N4151-GT3
Sangdest Microelectronics (Nanjing) Co Ltd
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SANGDEST MICROELECTRONICS (NANJING) CO LTD | |
Package Description | O-LALF-W2 | |
Reach Compliance Code | unknown | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
JEDEC-95 Code | DO-35 | |
JESD-30 Code | O-LALF-W2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Output Current-Max | 0.15 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Power Dissipation-Max | 0.5 W | |
Qualification Status | Not Qualified | |
Rep Pk Reverse Voltage-Max | 75 V | |
Reverse Recovery Time-Max | 0.004 µs | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |