Datasheets
1N2970 by:

Zener Diode, 6.8V V(Z), 20%, 10W, Silicon, Unidirectional, DO-4, HERMETIC SEALED, DO-4, 1 PIN

Part Details for 1N2970 by New England Semiconductor

Overview of 1N2970 by New England Semiconductor

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Applications Energy and Power Systems Renewable Energy Electronic Manufacturing Automotive

Part Details for 1N2970

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1N2970 Part Data Attributes:

1N2970 New England Semiconductor
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1N2970 New England Semiconductor Zener Diode, 6.8V V(Z), 20%, 10W, Silicon, Unidirectional, DO-4, HERMETIC SEALED, DO-4, 1 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR
Package Description HERMETIC SEALED, DO-4, 1 PIN
Reach Compliance Code unknown
Additional Feature HIGH RELIABILITY
Case Connection ANODE
Configuration SINGLE
Diode Element Material SILICON
Diode Type ZENER DIODE
Dynamic Impedance-Max 1.2 Ω
JEDEC-95 Code DO-4
JESD-30 Code O-MUPM-D1
Knee Impedance-Max 500 Ω
Number of Elements 1
Number of Terminals 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material METAL
Package Shape ROUND
Package Style POST/STUD MOUNT
Polarity UNIDIRECTIONAL
Power Dissipation-Max 10 W
Qualification Status Not Qualified
Reference Voltage-Nom 6.8 V
Reverse Current-Max 150 µA
Surface Mount NO
Technology ZENER
Terminal Form SOLDER LUG
Terminal Position UPPER
Voltage Temp Coeff-Max 2.72 mV/°C
Voltage Tol-Max 20%
Working Test Current 370 mA

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