Datasheets
1MBI300F-060 by: Fuji Electric Co Ltd

Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN

Part Details for 1MBI300F-060 by Fuji Electric Co Ltd

Overview of 1MBI300F-060 by Fuji Electric Co Ltd

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Part Details for 1MBI300F-060

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1MBI300F-060 Part Data Attributes:

1MBI300F-060 Fuji Electric Co Ltd
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1MBI300F-060 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer COLLMER SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-PUFM-X4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW SATURATION VOLTAGE
Collector Current-Max (IC) 300 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1500 ns
Turn-on Time-Nom (ton) 800 ns

Alternate Parts for 1MBI300F-060

This table gives cross-reference parts and alternative options found for 1MBI300F-060. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBI300F-060, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MG400H1US1 TRANSISTOR 400 A, 500 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 1MBI300F-060 vs MG400H1US1
CM300DY-12H Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, Powerex Power Semiconductors 1MBI300F-060 vs CM300DY-12H
MG100J2YS9 TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components 1MBI300F-060 vs MG100J2YS9
APTGT300A60TG Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc 1MBI300F-060 vs APTGT300A60TG
2MBI300L-060 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M217, 7 PIN Fuji Electric Co Ltd 1MBI300F-060 vs 2MBI300L-060
CM300DY-24T Insulated Gate Bipolar Transistor, Mitsubishi Electric 1MBI300F-060 vs CM300DY-24T
1MBI400F-060 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN Fuji Electric Co Ltd 1MBI300F-060 vs 1MBI400F-060
CM600HA-12H Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, Mitsubishi Electric 1MBI300F-060 vs CM600HA-12H
CM150DU-12H Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, Mitsubishi Electric 1MBI300F-060 vs CM150DU-12H
MG400J2YS50 TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, 2-109D1A, 8 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 1MBI300F-060 vs MG400J2YS50

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